Dislocation-related optical absorption in plastically deformed GaN

被引：19
作者：
Hasegawa, Hiroki
Kamimura, Yasushi
Edagawa, Keiichi [1 ]
Yonenaga, Ichiro
机构：
[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan
[2] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
来源：
JOURNAL OF APPLIED PHYSICS | 2007年 / 102卷 / 02期
关键词：
D O I：
10.1063/1.2756074
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Optical absorption spectra have been measured for plastically deformed GaN to investigate effects of dislocations. The interband absorption edge has been observed to shift noticeably to lower photon energy by deformation, which has been analyzed based on a model of the Franz-Keldysh effect by the electric fields associated with charged dislocations. This model has satisfactorily reproduced the observed absorption spectra. In a lower energy region, a decrease in free-carrier absorption by deformation has been observed, which is partly attributable to the decrease in carrier concentration by carrier trapping at dislocation states. (c) 2007 American Institute of Physics.
引用
收藏
页数：3
相关论文
共 26 条
[1]   OPTICAL-ABSORPTION OF 60 DEGREES DISLOCATIONS IN GERMANIUM [J].
BARTH, W ;
ELSAESSER, K ;
GUTH, W .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 34 (01) :153-163
[2]  
BAZHENOV AV, 1984, FIZ TVERD TELA, V26, P356
[3]   ANTISITE DEFECTS IN PLASTICALLY-DEFORMED GAAS - AN ALTERNATIVE ANALYSIS [J].
BRAY, R .
SOLID STATE COMMUNICATIONS, 1986, 60 (11) :867-870
[4]  
Cai J, 2002, PHYS STATUS SOLIDI A, V192, P407, DOI 10.1002/1521-396X(200208)192:2<407::AID-PSSA407>3.0.CO
[5]  
2-M
[6]  
Cherns D, 2002, PHYS STATUS SOLIDI B, V234, P924, DOI 10.1002/1521-3951(200212)234:3<924::AID-PSSB924>3.0.CO
[7]  
2-8
[8]   Electron holography studies of the charge on dislocations in GaN [J].
Cherns, D ;
Jiao, CG .
PHYSICAL REVIEW LETTERS, 2001, 87 (20) :205504-1
[9]   REFRACTIVE INDEX OF GAN [J].
EJDER, E .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1971, 6 (02) :445-&
[10]  
Klassen N. V., 1973, Soviet Physics - Solid State, V14, P3094
123