Vertical-tunneling field-effect transistor based on MoTe2/MoS2 2D-2D heterojunction

被引：31

作者：

Koo, Bondae ^{[1
,2
]}

Shin, Gwang Hyuk ^{[1
]}

Park, Hamin ^{[1
]}

Kim, Hojn ^{[1
]}

Choi, Sung-Yool ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Graphene Mat Res Ctr 2D, Sch Elect Engn, Daejeon 34141, South Korea

[2] Samsung Elect, Syst LSI, Yongin 17113, Gyeonggi Do, South Korea

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2018年 / 51卷 / 47期

基金：

新加坡国家研究基金会;

关键词：

MOSFET; tunneling transistor; heterostructure; MoS2; MoTe2; low-power device; OPTICAL-PROPERTIES; SINGLE; ELECTRONICS;

D O I：

10.1088/1361-6463/aae2a7

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate a vertical-tunneling field-effect transistor (FET) based on a MoTe2/MoS(2 )heterojunction. MoTe2 exhibits p-type characteristics, and it has a relatively small band gap and low electron affinity among 2D materials. On the contrary, MoS2 exhibits high electron affinity and n-type characteristics. Therefore, it is possible to improve the tunneling property by stacking two materials. X-ray photoelectron spectroscopy analysis was carried out to confirm the band alignment between MoTe2 and MoS2, and it was confirmed that the stack of MoTe2 and MoS2 forms a staggered structure suitable for band-to-band tunneling. To improve the electrical characteristics of the device, MoS2 with high conductivity was placed on the upper part of the heterojunction, on which the top gate was formed, and gate controllability was improved. In addition, when a source/drain was formed by considering the work function of MoTe2 and MoS2, Pd was deposited on MoTe2 and Ti was deposited on MoS2 to lower contact resistance and suppress the ambipolar characteristics of MoTe2. Consequently, the MoTe2/MoS2 heterojunction vertical tunneling FET achieved a low subthreshold swing of 34 mV/dec and a high on/off ratio of 10(6) at room temperature. In addition, we confirmed band-to-band tunneling through temperature dependent transfer characteristics.

引用

页数：7

共 34 条

[1]

[Anonymous], IEEE INT EL DEV M 9

[2] Band-to-band tunneling in carbon nanotube field-effect transistors [J].

Appenzeller, J ;

Lin, YM ;

Knoch, J ;

Avouris, P .

PHYSICAL REVIEW LETTERS, 2004, 93 (19) :196805-1

[3] Si-InAs heterojunction Esaki tunnel diodes with high current densities [J].

Bjork, M. T. ;

Schmid, H. ;

Bessire, C. D. ;

Moselund, K. E. ;

Ghoneim, H. ;

Karg, S. ;

Lortscher, E. ;

Riel, H. .

APPLIED PHYSICS LETTERS, 2010, 97 (16)

[4] Band Alignment of 2D Transition Metal Dichalcogenide Heterojunctions [J].

Chiu, Ming-Hui ;

Tseng, Wei-Hsuan ;

Tang, Hao-Ling ;

Chang, Yung-Huang ;

Chen, Chang-Hsiao ;

Hsu, Wei-Ting ;

Chang, Wen-Hao ;

Wu, Chih-I ;

Li, Lain-Jong .

ADVANCED FUNCTIONAL MATERIALS, 2017, 27 (19)

[5] Tunneling field-effect transistors (TFETs) with subthreshold swing (SS) less than 60 mV/dec [J].

Choi, Woo Young ;

Park, Byung-Gook ;

Lee, Jong Duk ;

Liu, Tsu-Jae King .

IEEE ELECTRON DEVICE LETTERS, 2007, 28 (08) :743-745

[6]

Fiori G, 2014, NAT NANOTECHNOL, V9, P768, DOI [10.1038/nnano.2014.207, 10.1038/NNANO.2014.207]

[7] OPTICAL PROPERTIES OF SINGLE CRYSTALS OF WSE2 AND MOTE2 [J].

FRINDT, RF .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1963, 24 (09) :1107-&

[8] Tunnel Field-Effect Transistors Based on InP-GaAs Heterostructure Nanowires [J].

Ganjipour, Bahram ;

Wallentin, Jesper ;

Borgstrom, Magnus T. ;

Samuelson, Lars ;

Thelander, Claes .

ACS NANO, 2012, 6 (04) :3109-3113

[9] Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors [J].

Gong, Cheng ;

Zhang, Hengji ;

Wang, Weihua ;

Colombo, Luigi ;

Wallace, Robert M. ;

Cho, Kyeongjae .

APPLIED PHYSICS LETTERS, 2013, 103 (05)

[10]

Gong YJ, 2014, NAT MATER, V13, P1135, DOI [10.1038/nmat4091, 10.1038/NMAT4091]

← 1 2 3 4 →