Exciton-polariton light-emitting diode based on a ZnO microwire

被引：30

作者：

Zhang, Zhe ^{[1
]}

Wang, Yinglei ^{[1
]}

Yin, Shaoyi ^{[1
]}

Hu, Tao ^{[1
]}

Wang, Yafeng ^{[1
]}

Liao, Liming ^{[1
]}

Luo, Song ^{[1
]}

Wang, Jun ^{[1
]}

Zhang, Xiaoyu ^{[1
]}

Ni, Peinan ^{[2
]}

Shen, Xuechu ^{[1
]}

Shan, Chongxin ^{[2
]}

Chen, Zhanghai ^{[1
]}

机构：

[1] Fudan Univ, Collaborat Innovat Ctr Adv Microstruct, Key Lab Micro & Nano Photon Struct, State Key Lab Surface Phys,Minist Educ,Dept Phys, Shanghai 200433, Peoples R China

[2] Chinese Acad Sci Changchun, Changchun Inst Opt Fine Mech & Phys, Key Lab Excited State Proc, Changchun 130033, Jilin, Peoples R China

来源：

OPTICS EXPRESS | 2017年 / 25卷 / 15期

基金：

中国国家自然科学基金;

关键词：

ELECTROLUMINESCENCE; TEMPERATURE;

D O I：

10.1364/OE.25.017375

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Room temperature electrically pumped exciton-polariton light-emitting diode (LED) based on the n-ZnO microwire/MgO/p-GaN heterojunction was fabricated. With the injection current of 1.5 mA, the ultraviolet electroluminescence centered at wavelength of 400 nm is obtained. The whispering gallery cavity model combined with the coupling oscillator model is used to describe the emission intensity modulation, from which the strong coupling regime of the system is proved to be surviving at room temperature. (C) 2017 Optical Society of America

引用

页码：17375 / 17381

页数：7

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