Diamond FinFET without Hydrogen Termination

被引：27

作者：

Huang, Biqin ^{[1
]}

Bai, Xiwei ^{[1
]}

Lam, Stephen K. ^{[1
]}

Tsang, Kenneth K. ^{[1
]}

机构：

[1] HRL Labs LLC, 3011 Malibu Canyon Rd, Malibu, CA 90265 USA

来源：

SCIENTIFIC REPORTS | 2018年 / 8卷

关键词：

FIELD-EFFECT TRANSISTORS; DEVICE OPERATION; INVERSION;

D O I：

10.1038/s41598-018-20803-5

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

In this letter we report the first diamond fin field-effect transistor (diamond FinFET) without a hydrogen-terminated channel. The device operates with hole accumulation by metal-oxide-semiconductor (MOS) structures built on fins to maintain effective control of the channel conduction. Devices with 100-nm-wide fins were designed and fabricated to ensure that the channel pinched off at zero gate bias. The transfer characteristic of FinFET showed a greater than 3000 on/off ratio, successfully demonstrating the transistor behavior. Devices were characterized at room temperature and at 150 degrees C, showing 30 mA/mm current density at 150 degrees C, 35 times more than current density at room temperature. The diamond FinFET, which leverages the fin concept from the silicon industry and the material advance of diamond, enables a new class of diamond transistors for applications from digital to power and radio frequency (RF) electronics.

引用

页数：6

共 21 条

[11]

Hu C. C., 2009, MODERN SEMICONDUCTOR, V162

[12] Device operation of p-i-p type diamond metal-insulator-semiconductor field effect transistors with sub-micrometer channel [J].

Kawakami, N ;

Yokota, Y ;

Hayashi, K ;

Tachibana, T ;

Kobashi, K .

[13] Inversion in Metal-Oxide-Semiconductor Capacitors on Boron-Doped Diamond [J].

Kovi, Kiran Kumar ;

Vallin, Orjan ;

Majdi, Saman ;

Isberg, Jan .

IEEE ELECTRON DEVICE LETTERS, 2015, 36 (06) :603-605

[14] HYDROGEN PASSIVATION OF ELECTRICALLY ACTIVE DEFECTS IN DIAMOND [J].

LANDSTRASS, MI ;

RAVI, KV .

APPLIED PHYSICS LETTERS, 1989, 55 (14) :1391-1393

[15] Design and fabrication of high-performance diamond triple-gate field-effect transistors [J].

Liu, Jiangwei ;

Ohsato, Hirotaka ;

Wang, Xi ;

Liao, Meiyong ;

Koide, Yasuo .

SCIENTIFIC REPORTS, 2016, 6

[16] Inversion channel diamond metal-oxide-semiconductor field-effect transistor with normally off characteristics [J].

Matsumoto, Tsubasa ;

Kato, Hiromitsu ;

Oyama, Kazuhiro ;

Makino, Toshiharu ;

Ogura, Masahiko ;

Takeuchi, Daisuke ;

Inokuma, Takao ;

Tokuda, Norio ;

Yamasaki, Satoshi .

SCIENTIFIC REPORTS, 2016, 6

[17] Revisiting MOSFET threshold voltage extraction methods [J].

Ortiz-Conde, Adelmo ;

Garcia-Sanchez, Francisco J. ;

Muci, Juan ;

Barrios, Alberto Teran ;

Liou, Juin J. ;

Ho, Ching-Sung .

MICROELECTRONICS RELIABILITY, 2013, 53 (01) :90-104

[18] Numerical Parameterization of Chemical-Vapor-Deposited (CVD) Single-Crystal Diamond for Device Simulation and Analysis [J].

Rashid, S. J. ;

Tajani, A. ;

Twitchen, D. J. ;

Coulbeck, L. ;

Udrea, F. ;

Butler, T. ;

Rupesinghe, N. L. ;

Brezeanu, M. ;

Isberg, J. ;

Garraway, A. ;

Dixon, M. ;

Balmer, R. S. ;

Chamund, D. ;

Taylor, P. ;

Amaratunga, G. A. J. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (10) :2744-2756

[19] RF Operation of Hydrogen-Terminated Diamond Field Effect Transistors: A Comparative Study [J].

Russell, Stephen ;

Sharabi, Salah ;

Tallaire, Alexandre ;

Moran, David A. J. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (03) :751-756

[20] Unipolar accumulation-type transistor configuration implemented using Si nanowires [J].

Shan, Yinghui ;

Ashok, S. ;

Fonash, Stephen J. .

APPLIED PHYSICS LETTERS, 2007, 91 (09)

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