Nanoscale electro-optic modulators based on graphene-slot waveguides

被引:226
作者
Lu, Zhaolin [1 ]
Zhao, Wangshi [1 ]
机构
[1] Rochester Inst Technol, Kate Gleason Coll Engn, Rochester, NY 14623 USA
基金
美国国家科学基金会;
关键词
OPTICAL MODULATOR; LAYER GRAPHENE; SILICON; RESONATORS; LIGHT; FILMS;
D O I
10.1364/JOSAB.29.001490
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Research on graphene has revealed its remarkable electro-optic properties, which promise to satisfy the needs of future electro-optic modulators. However, its ultrasmall thickness, compared with operating light wavelength, downplays its role in an optoelectronic device. The key to achieve efficient electro-optic modulation based on graphene is to enhance its interaction with light. To this end, some novel waveguides and platforms will be employed to enhance the interaction. Herein, we present our recent exploration of graphene electro-optic modulators based on graphene sandwiched in dielectric or plasmonic waveguides. With a suitable gate voltage, the dielectric constant of graphene can be tuned to be very small due to the effect of intraband electronic transition, resulting in "graphene-slot waveguides" and greatly enhanced absorption modes. Up to 3 dB modulation depth can be achieved within 800 nm long silicon waveguides, or 120 nm long plasmonic waveguides based on three-dimensional numerical simulations. They have the advantages of nanoscale footprints, small insertion loss, low power consumption, and potentially ultrahigh speed, as well as being CMOS-compatible. (C) 2012 Optical Society of America
引用
收藏
页码:1490 / 1496
页数:7
相关论文
共 43 条
[1]   42.7 Gbit/s electro-optic modulator in silicon technology [J].
Alloatti, L. ;
Korn, D. ;
Palmer, R. ;
Hillerkuss, D. ;
Li, J. ;
Barklund, A. ;
Dinu, R. ;
Wieland, J. ;
Fournier, M. ;
Fedeli, J. ;
Yu, H. ;
Bogaerts, W. ;
Dumon, P. ;
Baets, R. ;
Koos, C. ;
Freude, W. ;
Leuthold, J. .
OPTICS EXPRESS, 2011, 19 (12) :11841-11851
[2]   Graphene-based long-wave infrared TM surface plasmon modulator [J].
Andersen, David R. .
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 2010, 27 (04) :818-823
[3]   Superior thermal conductivity of single-layer graphene [J].
Balandin, Alexander A. ;
Ghosh, Suchismita ;
Bao, Wenzhong ;
Calizo, Irene ;
Teweldebrhan, Desalegne ;
Miao, Feng ;
Lau, Chun Ning .
NANO LETTERS, 2008, 8 (03) :902-907
[4]  
Bonaccorso F, 2010, NAT PHOTONICS, V4, P611, DOI [10.1038/nphoton.2010.186, 10.1038/NPHOTON.2010.186]
[5]   Ultrafast Carrier Dynamics in Graphite [J].
Breusing, Markus ;
Ropers, Claus ;
Elsaesser, Thomas .
PHYSICAL REVIEW LETTERS, 2009, 102 (08)
[6]   25Gb/s hybrid silicon switch using a capacitively loaded traveling wave electrode [J].
Chen, Hui-Wen ;
Kuo, Ying-hao ;
Bowers, John E. .
OPTICS EXPRESS, 2010, 18 (02) :1070-1075
[7]   Electro-optically induced absorption in α-Si:H/α-SiCN waveguiding multistacks [J].
Della Corte, Francesco G. ;
Rao, Sandro ;
Nigro, Maria A. ;
Suriano, Francesco ;
Summonte, Caterina .
OPTICS EXPRESS, 2008, 16 (10) :7540-7550
[8]   PlasMOStor: A Metal-Oxide-Si Field Effect Plasmonic Modulator [J].
Dionne, Jennifer A. ;
Diest, Kenneth ;
Sweatlock, Luke A. ;
Atwater, Harry A. .
NANO LETTERS, 2009, 9 (02) :897-902
[9]   Approaching ballistic transport in suspended graphene [J].
Du, Xu ;
Skachko, Ivan ;
Barker, Anthony ;
Andrei, Eva Y. .
NATURE NANOTECHNOLOGY, 2008, 3 (08) :491-495
[10]   The rise of graphene [J].
Geim, A. K. ;
Novoselov, K. S. .
NATURE MATERIALS, 2007, 6 (03) :183-191