Compact Electroabsorption Modulators for Photonic Integrated Circuits, Using an Isolated Pedestal Contact Scheme

被引：7

作者：

Daunt, Chris L. M. ^{[1
,2
]}

O'Callaghan, James ^{[2
]}

Lee, Ko-Hsin ^{[2
]}

Yang, Hua ^{[2
]}

Young, Robert J. ^{[2
]}

Thomas, Kevin ^{[2
]}

Pelucchi, Emanuele ^{[2
]}

Corbett, Brian ^{[2
]}

Peters, Frank H. ^{[1
,2
]}

机构：

[1] Univ Coll Cork, Dept Phys, Cork, Ireland

[2] Tyndall Natl Inst, Cork 310018, Ireland

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2012年 / 24卷 / 05期

基金：

爱尔兰科学基金会;

关键词：

Electroabsorption modulator (EAM); integrated optoelectronics; optical device fabrication; LASER;

D O I：

10.1109/LPT.2011.2179025

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate a shallow ridge waveguide, lumped element electroabsorption modulator (EAM) based on AlInGaAs multiple quantum wells, operating with input powers up to 8 dBm. The device was isolated between two DC controlled sections, using angled etched slots in the waveguide, minimizing optical feedback, while also providing 40-K Omega resistance between devices. The EAM uses a planar isolated pedestal contact with a benzocyclobutene bridge, allowing for a small contact footprint of just 0.024 mm(2), while being suitable for flip-chip packaging. The parasitic capacitance was measured to be 19.6 fF, and the EAM has a f(3dB) bandwidth of 42 GHz.

引用

页码：356 / 358

页数：3

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