Anisotropic Behavior of Electron-Phonon Coupling In Fe3O4 Thin Films

被引：0

作者：

Master, Ridhi ^{[1
]}

Choudhary, R. J. ^{[1
]}

Phase, D. M. ^{[1
]}

机构：

[1] UGC DAE Consortium Sci Res, Indore 452017, Madhya Pradesh, India

来源：

SOLID STATE PHYSICS: PROCEEDINGS OF THE 55TH DAE SOLID STATE PHYSICS SYMPOSIUM 2010, PTS A AND B | 2011年 / 1349卷

关键词：

Magnetite; Raman spectroscopy; thin films;

D O I：

10.1063/1.3606067

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We present results of Raman study on epitaxial Fe3O4 films grown in three different orientations (100, 110 and 111) on MgO (100), MgO (110) and c-axis Al2O3 substrates respectively. X-ray diffraction and in-plane (phi scan) measurements indicate that films are epitaxial and single phase in nature on all the three substrates. Using Allen's formula, the strength of the electron-phonon coupling (lambda) is estimated with the help of frequency and line width of different Raman modes. The observed variation in lambda value in epitaxially grown film in different orientation indicates the anisotropic behavior of electron-phonon coupling constant.

引用

页码：733 / 734

页数：2

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