Correlation between thermal-vibration-induced large displacement of Cu atoms and phase transition in Cu4SnS4: First-principles investigation

被引:5
作者
Nagasako, Naoyuki [1 ]
Suzumura, Akitoshi [1 ]
Asahi, Ryoji [1 ]
机构
[1] Toyota Cent Res & Dev Labs Inc, Nagakute, Aichi 4801192, Japan
关键词
First-principles calculation; Thermoelectric property; Electronic structure; Phase transition; Molecular dynamics simulation; TOTAL-ENERGY CALCULATIONS; LONE-PAIR ELECTRONS; THERMOELECTRIC PROPERTIES; PLANE-WAVE; THIN-FILMS; TETRAHEDRITES; SUBSTITUTION; DEPOSITION; COHP;
D O I
10.1016/j.actamat.2018.11.058
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
First-principles (FP) calculations and first-principles molecular dynamics (FPMD) simulations for Cu4SnS4 were performed to clarify the origin of the structural phase transition at 232 K between the high-temperature phase (HP) and low-temperature phase (LP), which leads to an experimentally measured drastic change in the transport properties of Cu4SnS4. The results of the FP and PFMD calculations indicated that, rather than being caused by the so-called freezing of soft modes, the key driving force behind the phase transition in Cu4SnS4 is a large-scale displacement of the Cu atoms located at particular sites due to thermal vibration. In fact, tetrahedrally coordinated CuS4 is stabilized by the effect of the thermal vibration of Cu atoms in the HP whereas CuS3, which is in a trigonal planar environment, is stabilized in the LP. (C) 2018 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:37 / 46
页数:10
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