Fabrication and optical properties of Si/CaF2(111) multi-quantum wells

被引：52

作者：

Bassani, F ^{[1
]}

Vervoort, L ^{[1
]}

Mihalcescu, I ^{[1
]}

Vial, JC ^{[1
]}

dAvitaya, FA ^{[1
]}

机构：

[1] UNIV GRENOBLE 1,SPECTROMETRIE PHYS LAB,F-38042 ST MARTIN DHERES,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1996年 / 79卷 / 08期

关键词：

D O I：

10.1063/1.361834

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have synthesized, by molecular beam epitaxy, Si/CaF2(111) multi-quantum wells which are photoluminescent at room temperature after ageing in air. In this article, we report on the structural properties and on a detailed optical study of these heterostructures. The photoluminescence spectra for various confinements and the temperature dependence of the lifetimes as a function of emission wavelength are described in comparison with the corresponding characteristics of porous silicon and hydrogenated amorphous silicon. A model based on quantum confinement is proposed to explain the experimental data. (C) 1996 American Institute of Physics.

引用

页码：4066 / 4071

页数：6

共 35 条

[1] EPITAXIAL-GROWTH OF SI FILMS ON CAF2/SI STRUCTURES WITH THIN SI LAYERS PREDEPOSITED AT ROOM-TEMPERATURE [J].

ASANO, T ;

ISHIWARA, H .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) :3566-3570

[2] EVIDENCE FOR THE INFLUENCE OF INTERFACIAL ATOMIC-STRUCTURE ON ELECTRICAL-PROPERTIES AT THE EPITAXIAL CAF2/SI(111) INTERFACE [J].

BATSTONE, JL ;

PHILLIPS, JM ;

HUNKE, EC .

PHYSICAL REVIEW LETTERS, 1988, 60 (14) :1394-1397

[3] THE ORIGIN OF VISIBLE LUMINESCENCE FROM POROUS SILICON - A NEW INTERPRETATION [J].

BRANDT, MS ;

FUCHS, HD ;

STUTZMANN, M ;

WEBER, J ;

CARDONA, M .

SOLID STATE COMMUNICATIONS, 1992, 81 (04) :307-312

[4]

CALCOTT PDJ, 1993, J PHYS CONDENS MATT, V5, P143

[5]

CALCOTT PDJ, 1993, J LUMIN, V57, P275

[6] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].

CANHAM, LT .

APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048

[7] THE TEMPERATURE-DEPENDENCE OF PHOTO-LUMINESCENCE IN A-SI-H ALLOYS [J].

COLLINS, RW ;

PAESLER, MA ;

PAUL, W .

SOLID STATE COMMUNICATIONS, 1980, 34 (10) :833-836

[8] LIGHT-EMISSION AT ROOM-TEMPERATURE FROM SI/CAF2 MULTILAYERS [J].

DAVITAYA, FA ;

VERVOORT, L ;

BASSANI, F ;

OSSICINI, S ;

FASOLINO, A ;

BERNARDINI, F .

EUROPHYSICS LETTERS, 1995, 31 (01) :25-30

[9] ELECTRON-MICROSCOPY OF EPITAXIAL SI/CAF2/SI STRUCTURES [J].

FATHAUER, RW ;

LEWIS, N ;

SCHOWALTER, LJ ;

HALL, EL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02) :736-738

[10] UNIMPORTANCE OF SILOXENE IN THE LUMINESCENCE OF POROUS SILICON [J].

FRIEDMAN, SL ;

MARCUS, MA ;

ADLER, DL ;

XIE, YH ;

HARRIS, TD ;

CITRIN, PH .

APPLIED PHYSICS LETTERS, 1993, 62 (16) :1934-1936

← 1 2 3 4 →