Impact of Nitrogen Incorporation on the Interface Between Ge and La2O3 or Y2O3 Gate Dielectric: A Study on the Formation of Germanate

被引：7

作者：

Cheng, Zhi-Xiang ^{[1
]}

Liu, Lu ^{[1
]}

Xu, Jing-Ping ^{[1
]}

Huang, Yong ^{[1
]}

Lai, Pui-To ^{[2
]}

Tang, Wing-Man ^{[3
]}

机构：

[1] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China

[2] Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China

[3] Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2016年 / 63卷 / 12期

基金：

中国国家自然科学基金;

关键词：

Ge MOS; germanate; interface quality; nitrogen incorporation; ELECTRICAL-PROPERTIES; DEPOSITION; MOSFETS; FILMS;

D O I：

10.1109/TED.2016.2618221

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

La2O3 and Y2O3 are used as gate dielectric in Ge MOS capacitors, and their electrical and interfacial properties are comparatively studied. Due to the much higher reactivity of La2O3 with Ge than Y2O3, thicker germanate interlayer is formed, leading to better interface quality for the former. Moreover, it is found that N incorporation in the oxides reduces the formation of both germanate and GeOx, with much more obvious effect for La2O3 and thus the best interface quality (a low interface-state density of 4.96 x 10(11) cm(-2)eV(-1)), which gives promising electrical properties: large equivalent dielectric constant (18.8), small flat-band shift (0.37 V), low gate leakage current (2.89 x 10(-4) A/cm(2) at V-g = V-fb + 1 V), and high reliability under electrical stress.

引用

页码：4888 / 4892

页数：5

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