Silicon Filaments in Silicon Oxide for Next-Generation Photovoltaics

被引：118
作者：
Cuony, Peter [2 ]
Alexander, Duncan T. L. [1 ]
Perez-Wurfl, Ivan [3 ]
Despeisse, Matthieu [2 ]
Bugnon, Gregory [2 ]
Boccard, Mathieu [2 ]
Soederstroem, Thomas [2 ,3 ]
Hessler-Wyser, Aicha [1 ]
Hebert, Cecile [1 ]
Ballif, Christophe [2 ]
机构：
[1] Ecole Polytech Fed Lausanne, Interdisciplinary Ctr Electron Microscopy, CH-1015 Lausanne, Switzerland
[2] Ecole Polytech Fed Lausanne, Photovolta & Thin Film Elect Lab, Inst Microengn, CH-2000 Neuchatel, Switzerland
[3] Univ New S Wales, Sch Photovolta & Renewable Energy Engn, Sydney, NSW 2052, Australia
来源：
ADVANCED MATERIALS | 2012年 / 24卷 / 09期
关键词：
photovoltaic devices; thin films; silicon oxide; mixed phase; silicon filaments; photoluminescence; SOLAR-CELLS; AMORPHOUS-SILICON; SI; NANOCRYSTALS; LAYERS; PHOTOLUMINESCENCE; NANOPARTICLES; MECHANISM; EVOLUTION; FILMS;
D O I：
10.1002/adma.201104578
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Nanometer wide silicon filaments embedded in an amorphous silicon oxide matrix are grown at low temperatures over a large area. The optical and electrical properties of these mixed-phase nanomaterials can be tuned independently, allowing for advanced light management in high efficiency thin-film silicon solar cells and for band-gap tuning via quantum confinement in third-generation photovoltaics. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：1182 / 1186
页数：5
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