Effect of Al composition and gate recess on power performance of AlGaN/GaN high-electron mobility transistors

被引：20

作者：

Pei, Y. ^{[1
]}

Chu, R. ^{[1
]}

Shen, L. ^{[1
]}

Fichtenbaum, N. A. ^{[1
]}

Chen, Z. ^{[1
]}

Brown, D. ^{[1
]}

Keller, S. ^{[1
]}

Denbaars, S. P. ^{[1
]}

Mishra, U. K. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2008年 / 29卷 / 04期

关键词：

Al composition; gallium nitride; gate recess; high-electron mobility transistor (HEMT); power;

D O I：

10.1109/LED.2008.917936

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

AlGaN/GaN high-electron mobility transistors with different Al compositions and barrier thicknesses were compared. The samples with higher Al composition and similar 2-D electron gas density showed higher gate leakage, utilizing a slant field plate gate process. By applying a gate recess etch and a slant field plate gate process, gate leakage was improved to a similar level for all the devices, and the power density and PAE were much improved.

引用

页码：300 / 302

页数：3

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