Effect of indentation on I-V characteristics of Au/n-GaAs Schottky barrier diodes

被引：1
|
作者：
Ozdemir, Ahmet Faruk [1 ]
Calik, Adnan [2 ]
Cankaya, Guven [3 ]
Sahin, Osman [1 ]
Ucar, Nazim [1 ]
机构：
[1] Suleyman Demirel Univ, Dept Phys, Art & Sci Fac, TR-32200 Isparta, Turkey
[2] Suleyman Demirel Univ, Dept Mech Educ, Tech Educ Fac, TR-32200 Isparta, Turkey
[3] Gaziosmanpasa Univ, Dept Phys, Art & Sci Fac, Tokat, Turkey
来源：
ZEITSCHRIFT FUR NATURFORSCHUNG SECTION A-A JOURNAL OF PHYSICAL SCIENCES | 2008年 / 63卷 / 3-4期
关键词：
Schottky barrier diode; barrier height; ideality factor; indentation; fermi level pinning;
D O I：
10.1515/zna-2008-3-414
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Au/n-GaAs Schottky barrier diodes (SBDs) have been fabricated. The effect of indentation on Schottky diode parameters such as Schottky barrier height (phi(b)) and ideality factor (n) was studied by current-voltage (I-V) measurements. The method used for indentation was the Vickers microhardness test at room temperature. The experimental results showed that the I-V characteristics move to lower currents due to an increase of Ob with increasing indentation weight, while contacts showed a nonideal diode behaviour.
引用
收藏
页码：199 / 202
页数：4
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