Comparative study of the plastic deformation- and implantation-induced centers in silicon

被引：6

作者：

Yarykin, N ^{[1
]}

Steinman, E

机构：

[1] Russian Acad Sci, Inst Microelect Technol, Chernogolovka 142432, Moscow Region, Russia

[2] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Moscow Region, Russia

来源：

PHYSICA B-CONDENSED MATTER | 2003年 / 340卷

关键词：

silicon; dislocations; implantation;

D O I：

10.1016/j.physb.2003.09.231

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The electrical and optical properties of defects introduced into silicon either by plastic deformation at 630degreesC or by MeV self-implantation and subsequent annealing at 630degreesC are compared. It is shown, based on the new experimental results and literature data that most of the deep-level transient spectroscopy (DLTS) lines revealed in the deformed crystals coincide with the DLTS signatures of small interstitial clusters in the dislocation-free implanted/annealed samples. In opposite, the photoluminescence (PL) D1-D4 dislocation bands are observed only in the dislocated crystals. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：756 / 759

页数：4