Comparative study of the plastic deformation- and implantation-induced centers in silicon

被引：6
作者：
Yarykin, N [1 ]
Steinman, E
机构：
[1] Russian Acad Sci, Inst Microelect Technol, Chernogolovka 142432, Moscow Region, Russia
[2] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Moscow Region, Russia
来源：
PHYSICA B-CONDENSED MATTER | 2003年 / 340卷
关键词：
silicon; dislocations; implantation;
D O I：
10.1016/j.physb.2003.09.231
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The electrical and optical properties of defects introduced into silicon either by plastic deformation at 630degreesC or by MeV self-implantation and subsequent annealing at 630degreesC are compared. It is shown, based on the new experimental results and literature data that most of the deep-level transient spectroscopy (DLTS) lines revealed in the deformed crystals coincide with the DLTS signatures of small interstitial clusters in the dislocation-free implanted/annealed samples. In opposite, the photoluminescence (PL) D1-D4 dislocation bands are observed only in the dislocated crystals. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：756 / 759
页数：4
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