1.3-μm continuous wave lasing of InAs quantum dots with GaInNAs covering layer on GaAs substrate grown by metal-organic chemical vapor deposition

被引：0

作者：

Kushibe, M. ^{[1
]}

Hashimoto, R. ^{[1
]}

Ezaki, M. ^{[1
]}

Managaki, N. ^{[1
]}

Hatakoshi, G. ^{[1
]}

Nishioka, M. ^{[2
,3
]}

Arakawa, Y. ^{[2
,3
]}

机构：

[1] Toshiba Co Ltd, Ctr Corp Res & Dev, Adv Elect Devices Lab, 1 Komukai,Toshiba Cho, Kawasaki, Kanagawa 2128582, Japan

[2] Univ Tokyo, Nanoelect Collaborat Res Ctr, IIS, Meguro Ku, Tokyo 1530041, Japan

[3] Univ Tokyo, RCAST, Meguro Ku, Tokyo 1530041, Japan

来源：

2007 PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, VOLS 1-4 | 2007年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Room-temperature continuous wave lasing in quantum dots covered with GaInNAs on GaAs substrate was attained at 1.31 mu m with threshold current density of 0.4 kA/cm(2) by metal-organic chemical vapor deposition. The range of continuous wave lasing was extended to 1.33 mu m with using a thin p-clad layer.

引用

页码：1266 / +

页数：2

共 50 条

[41] Low-temperature metal-organic vapor-phase epitaxy growth and performance of 1.3-μm GaInNAs/GaAs single quantum well lasers
Plaine, G.-Y. (aspund@ele.kth.se), 1600, Japan Society of Applied Physics (41):
[42] Growth of InAs/Sb:GaAs quantum dots by the antimony-surfactant mediated metal organic chemical vapor deposition for laser fabrication in the 1.3 μm band
Guimard, Denis
Bordel, Damien
Ishida, Mitsuru
Nishioka, Masao
Wakayama, Yuki
Tanaka, Yu
Sudo, Hisao
Yamamoto, Tsuyoshi
Kondo, Hayato
Sugawara, Mitsuru
Arakawa, Yasuhiko
QUANTUM DOTS AND NANOSTRUCTURES: SYNTHESIS, CHARACTERIZATION, AND MODELING VII, 2010, 7610
[43] Electrically pumped continuous-wave 1.3-μm InAs/GaAs quantum dot lasers monolithically grown on Si substrates
Wu, Jiang
Lee, Andrew
Jiang, Qi
Tang, Mingchu
Seeds, Alwyn J.
Liu, Huiyun
IET OPTOELECTRONICS, 2014, 8 (02) : 20 - 24
[44] InAs/Sb:GaAs quantum dot solar cells grown by metal organic chemical vapor deposition
Guimard, Denis
Bordel, Damien
Morihara, Ryo
Wakayama, Yuki
Tanabe, Katsuaki
Nishioka, Masao
Arakawa, Yasuhiko
2009 34TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-3, 2009, : 2142 - 2146
[45] Growth of InAs Quantum Dots on Germanium Substrate Using Metal Organic Chemical Vapor Deposition Technique
Tanuj Dhawan
Renu Tyagi
RajeshKumar Bag
Mahavir Singh
Premila Mohan
T Haldar
R Murlidharan
RP Tandon
Nanoscale Research Letters, 5
[46] Growth of InAs Quantum Dots on Germanium Substrate Using Metal Organic Chemical Vapor Deposition Technique
Dhawan, Tanuj
Tyagi, Renu
Bag, Rajesh Kumar
Singh, Mahavir
Mohan, Premila
Haldar, T.
Murlidharan, R.
Tandon, R. P.
NANOSCALE RESEARCH LETTERS, 2010, 5 (01): : 31 - 37
[47] 1.3 μm luminescence and gain from defect-free InGaAs-GaAs quantum dots grown by metal-organic chemical vapour deposition
Ledentsov, NN
Maximov, MV
Bimberg, D
Maka, T
Torres, CMS
Kochnev, IV
Krestnikov, IL
Lantratov, VM
Cherkashin, NA
Musikhin, YM
Alferov, ZI
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2000, 15 (06) : 604 - 607
[48] Uniform InAs Quantum-dots on vicinal GaAs (100) substrates by pulsed atomic layer epitaxy via metal-organic chemical vapor deposition
Song, Minghui
Fang, Yanyan
Xiong, Hui
Wu, Zhihao
Dai, Jiangnan
Chen, Changqing
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2012, 6 (1-2): : 269 - 272
[49] Quantum dots and nanowires grown by metal-organic chemical vapor deposition for optoelectronic device applications
Tan, H. H.
Sears, K.
Mokkapati, S.
Fu, Lan
Kim, Yong
McGowan, P.
Buda, M.
Jagadish, Chennupati
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2006, 12 (06) : 1242 - 1254
[50] High-temperature characteristic in 1.3-μm-range highly strained GaInNAs ridge stripe lasers crown by metal-organic chemical vapor deposition
Sato, S
Satoh, S
IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (12) : 1560 - 1562

← 1 2 3 4 5 →