1.3-μm continuous wave lasing of InAs quantum dots with GaInNAs covering layer on GaAs substrate grown by metal-organic chemical vapor deposition

被引：0
|
作者：
Kushibe, M. [1 ]
Hashimoto, R. [1 ]
Ezaki, M. [1 ]
Managaki, N. [1 ]
Hatakoshi, G. [1 ]
Nishioka, M. [2 ,3 ]
Arakawa, Y. [2 ,3 ]
机构：
[1] Toshiba Co Ltd, Ctr Corp Res & Dev, Adv Elect Devices Lab, 1 Komukai,Toshiba Cho, Kawasaki, Kanagawa 2128582, Japan
[2] Univ Tokyo, Nanoelect Collaborat Res Ctr, IIS, Meguro Ku, Tokyo 1530041, Japan
[3] Univ Tokyo, RCAST, Meguro Ku, Tokyo 1530041, Japan
来源：
2007 PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, VOLS 1-4 | 2007年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Room-temperature continuous wave lasing in quantum dots covered with GaInNAs on GaAs substrate was attained at 1.31 mu m with threshold current density of 0.4 kA/cm(2) by metal-organic chemical vapor deposition. The range of continuous wave lasing was extended to 1.33 mu m with using a thin p-clad layer.
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页码：1266 / +
页数：2
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