Demonstration of InGaN Light-Emitting Diodes by Incorporating a Self-Textured Oxide Mask Structure

被引：4

作者：

Lin, Wen-Yu ^{[1
]}

Wuu, Dong-Sing ^{[1
]}

Huang, Shih-Cheng ^{[1
]}

Lo, Shih-Yung ^{[1
]}

Liu, Chien-Min ^{[1
]}

Horng, Ray-Hua ^{[2
,3
]}

机构：

[1] Natl Chung Hsing Univ, Dept Mat Sci & Engn, Taichung 40227, Taiwan

[2] Natl Cheng Kung Univ, Dept Electroopt Engn, Tainan 70101, Taiwan

[3] Natl Chung Hsing Univ, Inst Precis Engn, Taichung 40227, Taiwan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2011年 / 23卷 / 17期

关键词：

Fabry-Perot; InGaN; light-emitting diode (LED); oxide; WET ETCHING PROCESS; EFFICIENCY;

D O I：

10.1109/LPT.2011.2158992

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 460-nm InGaN light-emitting diode (LED) with a self-textured oxide mask (STOM) array structure upon an additional low-temperature GaN interlayer is demonstrated. As compared with a conventional LED, the electroluminescence (EL) spectrum of an STOM-LED displays a manifest peak profile without Fabry-Perot interference fringes, one-fold increment in EL intensity, and 43% enhancement in total output power at an injection current of 20 mA. High-density light-emitting dots across the STOM-LED surface are discovered at a small injection current of 20 A because the STOM array can act as scattering centers to enhance the light extraction.

引用

页码：1240 / 1242

页数：3

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