Nanocrack-induced leakage current in AlInN/AlN/GaN

被引：9

作者：

Minj, Albert ^{[1
]}

Cavalcoli, Daniela ^{[1
]}

Pandey, Saurabh ^{[1
]}

Fraboni, Beatrice ^{[1
]}

Cavallini, Anna ^{[1
]}

Brazzini, Tommaso ^{[2
,3
]}

Calle, Fernando ^{[2
,3
]}

机构：

[1] Univ Bologna, Dept Phys, I-40127 Bologna, Italy

[2] Univ Politecn Madrid, ETSI Telecomunicac, Dept Ingn Elect, E-28040 Madrid, Spain

[3] Univ Politecn Madrid, ETSI Telecomunicac, Inst Sistemas Optoelect & Microtecnol, E-28040 Madrid, Spain

来源：

SCRIPTA MATERIALIA | 2012年 / 66卷 / 06期

关键词：

C-AFM; Indium; Segregation; Nano-cracks; AlInN/AlN/GaN; ALGAN/GAN HETEROSTRUCTURES; GAN;

D O I：

10.1016/j.scriptamat.2011.11.024

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Here we report on the study of nano-crack formation in Al1-x,InxN/AlN/GaN heterostructures, on its association with composition fluctuation and on its local electrical properties. It is shown here that indium segregation at nano-cracks and threading dislocations originating from the non-pseudomorphic MN interlayer could be the cause of the high reverse-bias gate leakage current of Ni/Au Schottky contacts on Al1-xInxN/AlN/GaN heterostructures and significantly affects the contact rectifying behavior. Segregation of indium around crack tips in Al1-x,InxN acting as conductive paths was assessed with conductive atomic force microscopy. (C) 2011 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

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页码：327 / 330

页数：4

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