The Effect of Dislocation Density and Surface Morphology on the Optical Properties of InGaN/GaN Quantum Wells Grown on r-Plane Sapphire Substrates

被引：5

作者：

Badcock, Tom J. ^{[1
]}

Hao, Rui ^{[2
]}

Moram, Michelle A. ^{[2
]}

Kappers, Menno J. ^{[2
]}

Dawson, Phil ^{[1
]}

Humphreys, Colin J. ^{[2
]}

机构：

[1] Univ Manchester, Sch Phys & Astron, Photon Sci Inst, Manchester M13 9PL, Lancs, England

[2] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2011年 / 50卷 / 08期

基金：

英国工程与自然科学研究理事会;

关键词：

PIT FORMATION; GAN;

D O I：

10.1143/JJAP.50.080201

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The optical properties of non-polar InGaN/GaN multiple quantum wells grown on r-plane sapphire substrates are investigated as a function of threading dislocation density. The 6 K emission spectrum consists of a peak at 3.25 eV and a broad band centred around 2.64 eV. From microscopy and cathodoluminescence studies, the higher energy peak is assigned to recombination within quantum wells lying on the < 11 (2) over bar0) plane which are intersected by basal-plane stacking faults. The lower energy band is attributed to emission from sidewall quantum wells of varying width and composition which form on the various semi-polar facets of structural defects that develop during the quantum well growth. (C) 2011 The Japan Society of Applied Physics

引用

页数：3

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