Effect of InP Doping on the Phase Transition of Thin GeSbTe Films

被引：11
|
作者：
Bang, Ki Su [1 ]
Oh, Yong Jun [1 ]
Lee, Seung-Yun [1 ]
机构：
[1] Hanbat Natl Univ, Dept Appl Mat Engn, Taejon 305719, South Korea
来源：
JOURNAL OF ELECTRONIC MATERIALS | 2015年 / 44卷 / 08期
基金：
新加坡国家研究基金会;
关键词：
Chalcogenides; GeSbTe; InP; phase transition; crystallization; phase change memory; RANDOM-ACCESS MEMORY; CRYSTALLIZATION BEHAVIOR; THERMAL-STABILITY; GE2SB2TE5; FILMS; DOPED GE2SB2TE5; GLASSES; STORAGE;
D O I：
10.1007/s11664-015-3734-4
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report the crystallization and phase-transition behavior of GeSbTe thin films doped with indium phosphorus (InP). Pure GeSbTe thin films and InP-doped GeSbTe thin films were prepared by use of an rf magnetron sputtering method. After thermal annealing, electrical and optical changes in the thin films were observed. Sheet resistance and reflectance measurements revealed that InP doping suppresses crystallization of GeSbTe. X-ray diffraction analysis confirmed that addition of In and P atoms inhibits the phase transition from face-centered cubic to hexagonal closed-packed. Nucleation of the doped GeSbTe thin films was delayed at an annealing temperature of 100A degrees C; after thermal annealing, neither segregation nor formation of a secondary phase occurred. These results indicate that InP doping improves the amorphous stability of GeSbTe thin films. It is believed this enhanced amorphous stability is a result of the formation of multiple, strong crosslinks by the In and P atoms.
引用
收藏
页码：2712 / 2718
页数：7
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