Band Gap of Pb(Fe0.5Nb0.5)O3 Thin Films Prepared by Pulsed Laser Deposition

被引：5
作者：
Bartek, Nicole [1 ]
Shvartsman, Vladimir V. [1 ]
Bouyanfif, Houssny [2 ]
Schmitz, Alexander [3 ]
Bacher, Gerd [3 ]
Olthof, Selina [4 ]
Sirotinskaya, Svetlana [5 ]
Benson, Niels [5 ]
Lupascu, Doru C. [1 ]
机构：
[1] Univ Duisburg Essen, Inst Mat Sci, Ctr Nanointegrat Duisburg Essen CENIDE, D-45141 Essen, Germany
[2] Univ Picardie Jules Verne, Lab Phys Matiere Condensee UR2081, F-80039 Amiens, France
[3] Univ Duisburg Essen, Elect Mat & Nanostruct & Ctr Nanointegrat Duisbur, D-47057 Duisburg, Germany
[4] Univ Cologne, Inst Phys Chem, D-50939 Cologne, Germany
[5] Univ Duisburg Essen, Inst Technol Nanostruct, Ctr Nanointegrat Duisburg Essen CENIDE, D-47057 Duisburg, Germany
来源：
MATERIALS | 2021年 / 14卷 / 22期
关键词：
lead iron niobate; thin films; pulsed laser deposition; band gap; optical properties; photovoltaics; LANTHANUM-ZIRCONATE-TITANATE; PHOTOVOLTAIC PROPERTIES; ELECTRONIC-STRUCTURE; OPTICAL-PROPERTIES; LEAD; EFFICIENCY; PBTIO3; DEVICE; PB(ZR;
D O I：
10.3390/ma14226841
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Ferroelectric materials have gained high interest for photovoltaic applications due to their open-circuit voltage not being limited to the band gap of the material. In the past, different lead-based ferroelectric perovskite thin films such as Pb(Zr,Ti)O-3 (Pb,La)(Zr,Ti)O-3 and PbTiO3 were investigated with respect to their photovoltaic efficiency. Nevertheless, due to their high band gaps they only absorb photons in the UV spectral range. The well-known ferroelectric PbFe0.5Nb0.5O3 (PFN), which is in a structure similar to the other three, has not been considered as a possible candidate until now. We found that the band gap of PFN is around 2.75 eV and that the conductivity can be increased from 23 S/mu m to 35 S/mu m during illumination. The relatively low band gap value makes PFN a promising candidate as an absorber material.
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页数：9
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