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Band Gap of Pb(Fe0.5Nb0.5)O3 Thin Films Prepared by Pulsed Laser Deposition
被引:5
|作者:
Bartek, Nicole
[1
]
Shvartsman, Vladimir V.
[1
]
Bouyanfif, Houssny
[2
]
Schmitz, Alexander
[3
]
Bacher, Gerd
[3
]
Olthof, Selina
[4
]
Sirotinskaya, Svetlana
[5
]
Benson, Niels
[5
]
Lupascu, Doru C.
[1
]
机构:
[1] Univ Duisburg Essen, Inst Mat Sci, Ctr Nanointegrat Duisburg Essen CENIDE, D-45141 Essen, Germany
[2] Univ Picardie Jules Verne, Lab Phys Matiere Condensee UR2081, F-80039 Amiens, France
[3] Univ Duisburg Essen, Elect Mat & Nanostruct & Ctr Nanointegrat Duisbur, D-47057 Duisburg, Germany
[4] Univ Cologne, Inst Phys Chem, D-50939 Cologne, Germany
[5] Univ Duisburg Essen, Inst Technol Nanostruct, Ctr Nanointegrat Duisburg Essen CENIDE, D-47057 Duisburg, Germany
来源:
关键词:
lead iron niobate;
thin films;
pulsed laser deposition;
band gap;
optical properties;
photovoltaics;
LANTHANUM-ZIRCONATE-TITANATE;
PHOTOVOLTAIC PROPERTIES;
ELECTRONIC-STRUCTURE;
OPTICAL-PROPERTIES;
LEAD;
EFFICIENCY;
PBTIO3;
DEVICE;
PB(ZR;
D O I:
10.3390/ma14226841
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
Ferroelectric materials have gained high interest for photovoltaic applications due to their open-circuit voltage not being limited to the band gap of the material. In the past, different lead-based ferroelectric perovskite thin films such as Pb(Zr,Ti)O-3 (Pb,La)(Zr,Ti)O-3 and PbTiO3 were investigated with respect to their photovoltaic efficiency. Nevertheless, due to their high band gaps they only absorb photons in the UV spectral range. The well-known ferroelectric PbFe0.5Nb0.5O3 (PFN), which is in a structure similar to the other three, has not been considered as a possible candidate until now. We found that the band gap of PFN is around 2.75 eV and that the conductivity can be increased from 23 S/mu m to 35 S/mu m during illumination. The relatively low band gap value makes PFN a promising candidate as an absorber material.
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页数:9
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