Nondispersive dielectric component of ferroelectric thin films in the frequency range of 10-1-106 Hz -: art. no. 012905

被引:2
作者
Jiang, AQ
Chu, DP [2 ]
Migliorato, P
Kijima, T
Natori, E
Shimoda, T
机构
[1] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England
[2] Epson, Cambridge Res Lab, Cambridge CB4 0FE, England
[3] Epson Corp, Technol Platform Res Ctr, Nagano 3990293, Japan
关键词
D O I
10.1063/1.1993765
中图分类号
O59 [应用物理学];
学科分类号
摘要
We show that there exists a nondispersive (or elastic) capacitance component C-non which is independent of frequency f, ac amplitude V-OSC, and dc bias voltage V-dc, in the frequency range of 0.063 Hz-1 MHz. It can be separated from the total capacitance C-t of ferroelectric thin films by using either the C(V-dc,f)-C[V-dc,f((r))](V-OSC=const) or C(f,V-OSC)-C[f,V-OSC((r))](V-dc=const) plot, where f((r)) and V-OSC((r)) are the referenced frequency and ac amplitude, respectively. Our results suggest that the dispersive and nondispersive capacitance components may originate from different dielectric relaxation mechanisms. The extracted nondispersive C-non can be a useful physical parameter in evaluating maximum dielectric tunability for the phase-shift application of ferroelectric thin films in microwave devices and characterizing phase-transition temperature in a multilayered 0.2Pb(Zn1/3Nb2/3)O-3-0.8BaTiO(3)/Pb(Mg1/3Nb2/3)O-3 relaxor. (c) 2005 American Institute of Physics.
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页数:3
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