Thermal stability and radiation hardness of SiC-based Schottky-barrier diodes

被引：5

作者：

Afanas'ev, AV ^{[1
]}

Il'in, VA ^{[1
]}

Kazarin, IG ^{[1
]}

Petrov, AA ^{[1
]}

机构：

[1] St Petersburg State Univ Elect Engn, St Petersburg 197376, Russia

来源：

TECHNICAL PHYSICS | 2001年 / 46卷 / 05期

关键词：

Radiation; Spectroscopy; Thermal Stability; Auger; Doping Level;

D O I：

10.1134/1.1372950

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Pt/W/Cr/SiC Schottky-barrier diodes that retain good electrophysical parameters up to 450 degreesC are studied. With the Auger electron spectroscopy (AES) method, it is shown that the thermal stability is provided by using a multilayer metal composition that ensures the metal/SiC interface stability. The surface-barrier structures obtained are tested for radiation hardness. They are irradiated by fast neutrons with a fluence of 4.42 x 10(15) n/cm(2) and attendant gamma radiation with a dose of 8.67 x 10(5) R in the concentration range of N-d - N-a = 10(16-) 5 x 10(17) cm(-3). Irreversible modifications of the structures at N-d - N-a less than or equal to 8 X 10(16) cm(-3) are found. The degradation of the parameters is inversely proportional to the doping level. (C) 2001 MAIK "Nauka/lnterperiodica".

引用

页码：584 / 586

页数：3

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