Self-assembly of dodecaphenyl POSS thin films

被引:16
|
作者
Handke, Bartosz [1 ]
Klita, Lukasz [1 ]
Niemiec, Wiktor [1 ]
机构
[1] AGH Univ Sci & Technol, Fac Mat Sci & Ceram, Mickiewicza 30, PL-30059 Krakow, Poland
关键词
Silsesquioxane; Thin films; Self-assembly; X-ray reflectivity; Atomic force microscopy; OLIGOMERIC SILSESQUIOXANE POSS; X-RAY REFLECTIVITY; COPOLYMERS; REFLECTOMETRY; KINETICS; SURFACE;
D O I
10.1016/j.susc.2017.08.023
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The self-assembly abilities of Dodecaphenyl Polyhedral Oligomeric Silsesquioxane thin films on Si(1 0 0) surfaces were studied. Due to their thermal properties - relatively low sublimation temperature and preservation of molecular structure - cage type silsesquioxanes are ideal material for the preparation of a thin films by Physical Vapor Deposition. The Ultra-High Vacuum environment and the deposition precision of the PVD method enable the study of early stages of thin film growth and its molecular organization. X-ray Reflectivity and Atomic Force Microscopy measurements allow to pursuit size-effects in the structure of thin films with thickness ranges from less than a single molecular layer up to several tens of layers. Thermal treatment of the thin films triggered phase change: from a poorly ordered polycrystalline film into a well-ordered multilayer structure. Self-assembly of the layers is the effect of the pi-stacking of phenyl rings, which force molecules to arrange in a superlattice, forming stacks of alternating organic-inorganic layers. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码:70 / 75
页数:6
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