Deposition of M-C (M = Cr, Mn, Fe) films by magnetron sputtering

被引：1
作者：
Hou, QR [1 ]
Zhang, HY [1 ]
机构：
[1] Tsing Hua Univ, Dept Phys, Beijing 100084, Peoples R China
来源：
MODERN PHYSICS LETTERS B | 2005年 / 19卷 / 11期
关键词：
transition metal carbide; mechanical properties; electrical resistivity;
D O I：
10.1142/S0217984905008505
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Thin films of M-C (M = Cr, Mn, Fe) have been deposited on silicon substrates by magnetron sputtering. It was found that interdiffusion between carbide films and silicon substrates occurred for Mn-C/Si and Fe-C/Si samples. The hardness and elastic modulus of the Cr-C films were around 16 +/- 1 GPa and 210 +/- 21 GPa, respectively. Mn-C and Fe-C films were not so hard as Cr-C films. The resistivity of these films at room temperature was between 0.267 and 3.40 m Omega cm. The resistivity of Cr-C and Mn-C films changed a little with time at 673 K in air.
引用
收藏
页码：529 / 537
页数：9
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