Laser-Doped Back-Contact Solar Cells

被引:11
作者
Dahlinger, Morris [1 ]
Bazer-Bachi, Barbara [1 ]
Roeder, Tobias C. [1 ]
Koehler, Juergen R. [1 ]
Zapf-Gottwick, Renate [1 ]
Werner, Juergen H. [1 ]
机构
[1] Univ Stuttgart, Inst Photovolta, D-70569 Stuttgart, Germany
来源
IEEE JOURNAL OF PHOTOVOLTAICS | 2015年 / 5卷 / 03期
关键词
Back contact; back junction; boron emitter; high efficiency (IBC); laser doping; n-type; simulation; UNIFIED MOBILITY MODEL; DEVICE SIMULATION; DIFFUSION;
D O I
10.1109/JPHOTOV.2015.2411058
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
We present laser-doped interdigitated back-contacted solar cells with a record efficiency eta = 22.0%. The high versatility and spatial resolution of our laser doping process enable local n-type and p-type doping with a precision below 30 mu m and avoid any masking for doping. Nevertheless, the presented solar cells use photolithography (masking) to define the contact area and metallization layout. Quasi-steady-state photoconductance measurements prove the low-saturation current density of the laser doping. We process solar cells with varied pitch and emitter fraction and compare their measured current density-voltage characteristics with a 3-D solar cell simulation. The good agreement of the simulation and experimental data allows a reliable efficiency forecast when optimizations are applied. Furthermore, the influence of the base-busbar region on solar cell performance is discussed.
引用
收藏
页码:812 / 818
页数:7
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