Dielectronic recombination and energy loss for He-like Br-79 ions channeled in a thin single crystal of Si

被引：12

作者：

Andersen, JU

Chevallier, J

Ball, GC

Davies, WG

Forster, JS

Geiger, JS

Davies, JA

Geissel, H

Kanter, EP

机构：

[1] AECL RES, CHALK RIVER LABS, CHALK RIVER, ON K0J 1J0, CANADA

[2] MCMASTER UNIV, DEPT ENGN PHYS, HAMILTON, ON L8S 4M1, CANADA

[3] GESELL SCHWERIONENFORSCH DARMSTADT MBH, D-64220 DARMSTADT, GERMANY

[4] ARGONNE NATL LAB, ARGONNE, IL 60439 USA

来源：

PHYSICAL REVIEW A | 1996年 / 54卷 / 01期

关键词：

D O I：

10.1103/PhysRevA.54.624

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Dielectronic recombination of He-like Br-79 ions channeled along the [110] axis of a thin Si crystal has been studied by the measurement of the charge-state distribution and x-ray production. The results of the charge-state measurements confirm that the probability of resonance capture is proportional to the valence electron density sampled by the ion. The energy-loss distributions of channeled ions are also in good agreement with theoretical estimates.

引用

页码：624 / 635

页数：12

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