Fermi-level effect on the interdiffusion of InAs and InGaAs quantum dots

被引：21

作者：

Shchekin, OB ^{[1
]}

Deppe, DG ^{[1
]}

Lu, D ^{[1
]}

机构：

[1] Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78712 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 20期

关键词：

D O I：

10.1063/1.1372362

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Data are presented on the Fermi level influence on interdiffusion in self-organized quantum dots. Modulation doping is used to place either electrons or holes in the quantum dots' zero-dimensional levels. The ground state emission energy and discrete level energy separations show that p-type modulation doping enhances the interdiffusion of the quantum dot material with its surrounding barriers, while n-type doping inhibits the interdiffusion. The results are consistent with the interdiffusion proceeding through interstitial crystal defects. (C) 2001 American Institute of Physics.

引用

页码：3115 / 3117

页数：3

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