Photoluminescence and spin relaxation of MnZnO/GaN-based light-emitting diodes

被引：8

作者：

Chen, Lung-Chien ^{[1
]}

Tien, Ching-Ho ^{[1
]}

Luo, Yi-Min ^{[1
]}

Mu, Chien-Sheng ^{[1
]}

机构：

[1] Natl Taipei Univ Technol, Dept Electroopt Engn, Taipei 106, Taiwan

来源：

THIN SOLID FILMS | 2011年 / 519卷 / 08期

关键词：

Photoluminescence; Spin relaxation; Manganese zinc oxide; Gallium nitride; Light-emitting diodes; Metal-organic chemical vapor deposition; INJECTION;

D O I：

10.1016/j.tsf.2010.12.014

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This study investigates the spin relaxation of GaN-based light-emitting diodes with an MnZnO film by examining its photoluminescence (PL) and time-resolved magnetization modulation photoluminescence. PL measurements reveal that the application of a magnetic field produced a clear difference between the intensities of the right (sigma(+)) and left (sigma(-)) circular polarization components. The circular polarization was identified as P-circ=[I(sigma(+)) - I(sigma(-))]/[I(sigma(+))] + [I(sigma(-))]. where I(sigma(+)) and I(sigma-)are the intensities of the sigma(+) and sigma(-) components, respectively. The PL polarization was 3.6% in a 0.5 T magnetic field. In a magnetic field, the photo-ionized lifetime and spin-polarized lifetime values were approximately 13.64 and 54.54 ns, respectively. The right-circular-spin-polarization lifetime and the left-circular-spin-polarization lifetime values were about 39.09 and 40.01 ns, respectively. (C) 2010 Elsevier BM. All rights reserved.

引用

页码：2516 / 2519

页数：4

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