Resonant enhancement of dielectronic recombination by a high-frequency microwave field

被引：0
|
作者：
Shuman, ES [1 ]
Gallagher, TF [1 ]
机构：
[1] Univ Virginia, Dept Phys, Charlottesville, VA 22904 USA
来源：
PHYSICAL REVIEW A | 2005年 / 71卷 / 03期
关键词：
D O I：
10.1103/PhysRevA.71.033415
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Dielectronic recombination via the Ba 6p(3/2)nl states from a continuum of finite bandwidth is resonantly enhanced by a 38.8-GHz microwave field at the energies for which the Delta n=1, 2, ..., k transitions of the intermediate 6p(1/2)nl states are resonant with the microwave frequency. The mechanism is resonant Stark mixing of high and low l states by the microwave field. While static field enhancement of dielectronic recombination occurs at fields scaling as n(-5), the field required for enhancement of the Delta n=k, k >= 2 resonances is roughly n independent.
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页数：5
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