Simulation of Off-State degradation at high temperature in High Voltage NMOS transistor with STI architecture

被引：0

作者：

Bach, Stephane ^{[1
]}

Borella, Fabio ^{[1
]}

Cambieri, Juri ^{[1
]}

Pizzo, Giansalvo ^{[1
]}

Causio, Alessandro ^{[1
]}

Atzeni, Laura ^{[1
]}

Riccardi, Damiano ^{[1
]}

Zullino, Lucia ^{[1
]}

Croce, Giuseppe ^{[1
]}

Nannipieri, Alessandro ^{[2
]}

机构：

[1] STMicroelectronics, Technol R&D, Via C Olivetti 2, I-20041 Agrate Brianza, Milano, Italy

[2] Synopsys Switzerland, Zurich, Switzerland

来源：

2010 22ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) | 2010年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

After High Temperature Reverse Bias stress, high voltage NMOS transistors designed in 0.18 mu m technologies with STI architecture suffer from R-dson degradation, which can result in long term product failure. In this work, a degradation model is proposed based on results obtained on TCAD simulation, showing very good agreement with the experimental values.

引用

页码：189 / 192

页数：4

共 50 条

[21] Enhancement of AlGaN/GaN High-Electron Mobility Transistor Off-State Drain Breakdown Voltage via Backside Proton Irradiation
Ren, F.
Hwang, Y. -H.
Pearton, S. J.
Patrick, Erin
Law, Mark E.
GALLIUM NITRIDE MATERIALS AND DEVICES X, 2015, 9363
[22] Time evolution of off-state degradation of AlGaN/GaN high electron mobility transistors
Montes Bajo, M.
Sun, H.
Uren, M. J.
Kuball, M.
APPLIED PHYSICS LETTERS, 2014, 104 (22)
[23] Degradation of Off-State Performance and Its Reliability of NMOS with Deep N Well Induced by Plasma Charging
Zheng, Hui
Wang, Menghua
Huang, Zhimin
Li, Leqi
Liu, Zhikun
Sun, Niuyi
Wang, Jian
2024 IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS, IPFA 2024, 2024,
[24] OFF-State degradation in drain-extended NMOS transistors: Interface damage and correlation to dielectric breakdown
Varghese, Dhanoop
Kufluoglu, Haldun
Reddy, Vijay
Shichijo, Hisashi
Mosher, Dan
Krishnan, Srikanth
Alam, Muhammad Ashraful
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (10) : 2669 - 2678
[25] Role of oxygen in the OFF-state degradation of AlGaN/GaN high electron mobility transistors
Gao, Feng
Lu, Bin
Li, Libing
Kaun, Stephen
Speck, James S.
Thompson, Carl V.
Palacios, Tomas
APPLIED PHYSICS LETTERS, 2011, 99 (22)
[26] Real-time visualization of GaN/AlGaN high electron mobility transistor failure at off-state
Islam, Zahabul
Haque, Aman
Glavin, Nicholas
APPLIED PHYSICS LETTERS, 2018, 113 (18)
[27] Heavy ion irradiation effects on GaN/AlGaN high electron mobility transistor failure at off-state
Islam, Zahabul
Paoletta, Angela L.
Monterrosa, Anthony M.
Schuler, Jennifer D.
Rupert, Timothy J.
Hattar, Khalid
Glavin, Nicholas
Haque, Aman
MICROELECTRONICS RELIABILITY, 2019, 102
[28] Experimental Characterisation and Modelling of High-Voltage IGBT Modules Off-State Thermal Instability
Castellazzi, Alberto
Saiz, Jose
Mermet-Guyennet, Michel
EPE: 2009 13TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS, VOLS 1-9, 2009, : 1959 - +
[29] Threshold voltage shifts and their variability behaviors in p-channel FETs by high voltage on-state and off-state stress
Alias, Nurul Ezaila
Kumar, Anil
Saraya, Takuya
Hiramoto, Toshiro
JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (08) : 32 - 36
[30] High-temperature off-state characteristics of thin-SOI power devices
Arnold, E
Letavic, T
Bhimnathwala, H
IEEE ELECTRON DEVICE LETTERS, 1996, 17 (12) : 557 - 559

← 1 2 3 4 5 →