Influence of thin AlAs interface layers on exciton transitions in InGaAs/GaAs quantum wells

被引：0
作者：
Lee, KS [1 ]
Lee, EH
Lee, CD
Noh, SK
Kim, YM
机构：
[1] Elect & Telecommun Res Inst, Taejon 305600, South Korea
[2] Korea Res Inst Stand & Sci, Taejon 305600, South Korea
[3] Natl High Magnet Field Lab, Los Alamos, NM 87545 USA
来源：
MICROELECTRONIC ENGINEERING | 1998年 / 43-4卷
基金：
美国国家科学基金会;
关键词：
InGaAs/GaAs; quantum well; photoluminescence; magnetic field; exciton reduced mass;
D O I：
10.1016/S0167-9317(98)00169-5
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have optically determined carrier effective masses for a series of InGaAs/GaAs quantum wells with 0 or 2 monolayer ALAs sandwiched between InGaAs and GaAs. Photoluminescence investigations of exciton ground state were carried in the presence of a magnetic field up to 50 T. The reduced mass of heavy-hole exciton was determined by theoretical fits to its diamagnetic shifts. The heavy-hole in-plane mass increased when ultra-thin AlAs layers were inserted at the both interfaces of a quantum well. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：237 / 242
页数：6
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