Thermal conductivity of pure and Si-doped CuGeO3

被引：11
|
作者：
Salce, B
Devoille, L
Calemczuk, R
Buzdin, AI
Dhalenne, G
Revcolevschi, A
机构：
[1] CEA Grenoble, SPSMS, Dept Rech Fondamentale Mat Condensee, F-38054 Grenoble 9, France
[2] Univ Bordeaux 1, Phys Theor Lab, F-33174 Gradignan, France
[3] Univ Paris Sud, Lab Chim Solides, CNRS, URA 446, F-91405 Orsay, France
来源：
PHYSICS LETTERS A | 1998年 / 245卷 / 1-2期
关键词：
D O I：
10.1016/S0375-9601(98)00347-8
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The thermal conductivity K(T) of pure and Si-doped CuGeO3 single crystals has been measured in the temperature range 2-40 K, in order to study the influence of the spin-Peierls transition on the heat transport. Anisotropic effects along the three main crystallographic directions have been found. Changes in K(T) due to cyclings at room temperature have been observed. The results are qualitatively interpreted by assuming that phonons and pseudofermions contribute to the heat transport. (C) 1998 Elsevier Science B.V.
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收藏
页码：127 / 132
页数：6
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