Memory effect of nonvolatile bistable devices based on CdSe/ZnS nanoparticles sandwiched between C60 layers

被引：35

作者：

Li, Fushan ^{[1
]}

Son, Dong-Ick ^{[1
]}

Ham, Jung-Hun ^{[1
]}

Kim, Bong-Jun ^{[1
]}

Jung, Jae Hun ^{[1
]}

Kim, Tae Whan ^{[1
]}

机构：

[1] Hanyang Univ, Adv Semicond Res Ctr, Div Elect & Comp Engn, Seoul 133791, South Korea

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 16期

关键词：

D O I：

10.1063/1.2801357

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Current-voltage and conductance-voltage (G-V) measurements on three-layer Al/C-60/CdSe nanoparticles/C-60/indium tin oxide (ITO) structures fabricated by using a spin-coating method showed a nonvolatile electrical bistable behavior. Capacitance-voltage (C-V) measurements on Al/C-60/CdSe nanoparticles/C-60/ITO structures showed a clockwise hysteresis with a flatband voltage shift due to the existence of the CdSe nanoparticles, indicative of memory effects in the devices. Current-time measurements showed that the devices exhibited excellent memory retention ability at ambient conditions. Possible operating mechanisms for the memory effects in the Al/C-60/CdSe nanoparticles/C-60/ITO devices are described on the basis of the G-V and the C-V results. (C) 2007 American Institute of Physics.

引用

页数：3

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