Characterization of the HDP-CVD oxide as interlayer dielectric material for sub-quarter micron CMOS

被引：0

作者：

Kim, JW ^{[1
]}

Lee, JB ^{[1
]}

Hong, JG ^{[1
]}

Hwang, BK ^{[1
]}

Kim, ST ^{[1
]}

Han, MS ^{[1
]}

机构：

[1] Samsung Elect Co Ltd, Semicond R&D Ctr, Yongin, Kyungki Do, South Korea

来源：

PROCEEDINGS OF THE IEEE 1998 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 1998年

关键词：

D O I：

10.1109/IITC.1998.704921

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The characteristics and process optimization of high density plasma (HDP) CVD oxide as a word line to bitline interlayer dielectric (ILD) material in sub-quarter micron CMOS were investigated. To enhance the gap-filling capability, multi-step deposition of HDP CVD oxide was developed. Self-aligned contact (SAC) scheme could be used with HDP CVD oxide ILD with wide process margin and low thermal budget as compared to conventional methods such as O-3-TEOS undoped silicate glass (USG) and borophosphosilicate glass (BPSG)-reflow. Better or comparable Tr. performance was obtained with HDP CVD oxide compared to BPSG-reflow because of low thermal budget.

引用

页码：274 / 276

页数：3

共 33 条

[31] Characterization and reliability of low dielectric constant fluorosilicate glass and silicon rich oxide process for deep sub-micron device application
Cheng, YL
Wang, YL
Liu, CW
Wu, YL
Lo, KY
Liu, CP
Lan, JK
THIN SOLID FILMS, 2001, 398 : 533 - 538
[32] Novel implantation method to improve machine-model electrostatic discharge robustness of stacked N-channel metal-oxide semiconductors (NMOS) in sub-quarter-micron complementary metal-oxide semiconductors (CMOS) technology
Ker, MD
Hsu, HC
Peng, JJ
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2002, 41 (11B): : L1288 - L1290
[33] Novel implantation method to improve machine-model electrostatic discharge robustness of stacked N-channel metal-oxide semiconductors (NMOS) in sub-quarter-micron complementary metal-oxide semiconductors (CMOS) technology
Ker, M.-D. (mdker@ieee.org), 1600, Japan Society of Applied Physics (41):

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