A reaction pathway for water adsorption on Si(100)(2x1)

被引:0
|
作者
Lelis-Sousa, R. [1 ]
Caldas, M. J. [1 ]
机构
[1] Univ Sao Paulo, Inst Fis, BR-05508900 Sao Paulo, Brazil
来源
PHYSICS OF SEMICONDUCTORS | 2009年 / 1199卷
关键词
Silicon surfaces; water; oxidation process; reaction pathway; ab inito calculations; SURFACE;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present ab initio investigations for the reaction pathway between gas phase water and the Si(100)(2x1) surface. The results indicate that there is no barrier for adsorption and that the mechanism of dissociation occurs by molecular physisorption. However, the chemisorption process is very favorable (by Delta E=-2.14 eV) and the barrier is very small (Delta E=+0.01 eV). We show that the oxygen attack is efficient from any position of water colliding with the surface dimer, and that the interaction between the molecule and the surface begins earlier than estimated previously.
引用
收藏
页码:9 / 10
页数:2
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