Effect of carrier concentration on optical bandgap shift in ZnO:Ga thin films

被引：150
|
作者：
Kim, Chang Eun [1 ]
Moon, Pyung [1 ]
Kim, Sungyeon [2 ]
Myoung, Jae-Min [2 ]
Jang, Hyeon Woo [3 ]
Bang, Jungsik [3 ]
Yun, Ilgu [1 ]
机构：
[1] Yonsei Univ, Dept Elect & Elect Engn, Seoul 120749, South Korea
[2] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea
[3] LG Chem Ltd Res Pk, Taejon 305380, South Korea
来源：
THIN SOLID FILMS | 2010年 / 518卷 / 22期
关键词：
ZnO:Ga thin film; Burstein-Moss effect; Bandgap narrowing; Modified BM equation; Carrier concentration; DOPED ZNO;
D O I：
10.1016/j.tsf.2010.03.042
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The Ga-doped ZnO thin films were deposited on glass substrate by sputtering and annealed at 350 degrees C in hydrogen atmosphere for 1 h. The optical bandgap of thin films showed the lower blueshift than the theoretical value of the Burstein-Moss (BM) effect. The shift of bandgap was dependent on the carrier concentration and acquired by combining the nonparabolic BM effect and bandgap narrowing (BGN). The modified BM effect equation was proposed to substitute the nonparabolic BM effect and BGN. The exponent in the modified BM equation was affected by carrier concentration and it was decreased with carrier concentration. (c) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：6304 / 6307
页数：4
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