Effect of carrier concentration on optical bandgap shift in ZnO:Ga thin films

被引：150
|
作者：
Kim, Chang Eun [1 ]
Moon, Pyung [1 ]
Kim, Sungyeon [2 ]
Myoung, Jae-Min [2 ]
Jang, Hyeon Woo [3 ]
Bang, Jungsik [3 ]
Yun, Ilgu [1 ]
机构：
[1] Yonsei Univ, Dept Elect & Elect Engn, Seoul 120749, South Korea
[2] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea
[3] LG Chem Ltd Res Pk, Taejon 305380, South Korea
来源：
THIN SOLID FILMS | 2010年 / 518卷 / 22期
关键词：
ZnO:Ga thin film; Burstein-Moss effect; Bandgap narrowing; Modified BM equation; Carrier concentration; DOPED ZNO;
D O I：
10.1016/j.tsf.2010.03.042
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The Ga-doped ZnO thin films were deposited on glass substrate by sputtering and annealed at 350 degrees C in hydrogen atmosphere for 1 h. The optical bandgap of thin films showed the lower blueshift than the theoretical value of the Burstein-Moss (BM) effect. The shift of bandgap was dependent on the carrier concentration and acquired by combining the nonparabolic BM effect and bandgap narrowing (BGN). The modified BM effect equation was proposed to substitute the nonparabolic BM effect and BGN. The exponent in the modified BM equation was affected by carrier concentration and it was decreased with carrier concentration. (c) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：6304 / 6307
页数：4
相关论文
共 50 条
  • [21] Effect of heterovalent substitution on the electrical and optical properties of ZnO(M) thin films (M = Ga, In)
    Vorobyeva, N. A.
    Rumyantseva, M. N.
    Vasiliev, R. B.
    Kozlovskii, V. F.
    Soshnikova, Yu M.
    Filatova, D. G.
    Baranchikov, A. E.
    Ivanov, V. K.
    Gaskov, A. M.
    RUSSIAN JOURNAL OF INORGANIC CHEMISTRY, 2014, 59 (05) : 403 - 412
  • [22] Electrical and optical studies of Ga-doped ZnO thin films
    Hsiu-Ling Hsu
    Ching-Been Yang
    Chia-Ho Huang
    Chun-Yao Hsu
    Journal of Materials Science: Materials in Electronics, 2013, 24 : 13 - 19
  • [23] Electrical and optical studies of Ga-doped ZnO thin films
    Hsu, Hsiu-Ling
    Yang, Ching-Been
    Huang, Chia-Ho
    Hsu, Chun-Yao
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2013, 24 (01) : 13 - 19
  • [24] Carrier concentration dependence of band gap shift in n -type ZnO:Al films
    Lu, J.G.
    Fujita, S.
    Kawaharamura, T.
    Nishinaka, H.
    Kamada, Y.
    Ohshima, T.
    Ye, Z.Z.
    Zeng, Y.J.
    Zhang, Y.Z.
    Zhu, L.P.
    He, H.P.
    Zhao, B.H.
    Journal of Applied Physics, 2007, 101 (08):
  • [25] Carrier concentration dependent optical and electrical properties of Ga doped ZnO hexagonal nanocrystals
    Saha, Manas
    Ghosh, Sirshendu
    Ashok, Vishal Dev
    De, S. K.
    PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2015, 17 (24) : 16067 - 16079
  • [26] Effect of doping concentration on the conductivity and optical properties of p-type ZnO thin films
    Pathak, Trilok Kumar
    Kumar, Vinod
    Swart, H. C.
    Purohit, L. P.
    PHYSICA B-CONDENSED MATTER, 2016, 480 : 31 - 35
  • [27] Effect of nitric acid concentration on the optical and surface morphology of zinc oxide (ZnO) thin films
    Ajma'in, Faradila
    Yusoff, Mohd Zaki Mohd
    Yahya, Muhammad Syarifuddin
    Zainie, Intan Syaffinazzilla
    Abdullah, Che Azurahanim Che
    MATERIALS RESEARCH EXPRESS, 2019, 6 (11)
  • [28] ABSORPTION-EDGE SHIFT IN ZNO THIN-FILMS AT HIGH CARRIER DENSITIES
    ROTH, AP
    WEBB, JB
    WILLIAMS, DF
    SOLID STATE COMMUNICATIONS, 1981, 39 (12) : 1269 - 1271
  • [29] Effect of annealing on optical properties of ZnO thin films
    Wei Xian-Qi
    Wang Yong-Jie
    Zhang Zhong
    JOURNAL OF INFRARED AND MILLIMETER WAVES, 2011, 30 (03) : 224 - 228
  • [30] Optical property and aging effect of ZnO thin films
    Shan, FK
    Shin, BC
    Kim, SC
    Yu, YS
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2003, 42 : S1174 - S1177
12345