High nitrogen composition GaAsN by atmospheric pressure metalorganic vapor-phase epitaxy

被引：47

作者：

Toivonen, J ^{[1
]}

Hakkarainen, T ^{[1
]}

Sopanen, M ^{[1
]}

Lipsanen, H ^{[1
]}

机构：

[1] Helsinki Univ Technol, Optoelect Lab, FIN-02015 Helsinki, Finland

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 221卷 / 221期

关键词：

GaAsN; MOVPE; dimethylhydrazine; rapid thermal annealing; photoluminescence;

D O I：

10.1016/S0022-0248(00)00740-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Highly luminescent GaAs1-xNx alloys were successfully grown by atmospheric pressure metalorganic vapor-phase epitaxy (MOVPE). The nitrogen composition I of as high as 5.6% was obtained using trimethylgallium (TMGa), tertiarybutylarsine (TBAs) and dimethylhydrazine (DMHy) precursors. In-situ and post-growth rapid thermal annealing was performed to enhance the optical quality of the material. Intense low temperature photoluminescence was obtained from GaAsN down to 0.9 eV (1.38 mum). (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：456 / 460

页数：5

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