Ultra-high energy storage density and enhanced dielectric properties in BNT-BT based thin film

被引：39

作者：

Xie, Yanjiang ^{[1
]}

Hao, Hua ^{[1
]}

Xie, Juan ^{[1
]}

Zhang, Shuo ^{[1
]}

Cao, Minghe ^{[1
]}

Yao, Zhonghua ^{[1
]}

Liu, Hanxing ^{[1
,2
]}

机构：

[1] Wuhan Univ Technol, Sch Mat Sci & Engn, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China

[2] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Int Sch Mat Sci & Engn, Wuhan 430070, Peoples R China

来源：

CERAMICS INTERNATIONAL | 2021年 / 47卷 / 16期

关键词：

Energy storage; Thin film; BNT-BT; REDUCED LEAKAGE CURRENT; FERROELECTRIC PROPERTIES; PERFORMANCE; CAPACITORS;

D O I：

10.1016/j.ceramint.2021.05.038

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this work, Mn modified 0.94Bi0.5Na0.5TiO3-0.06BaTiO3 thin films (abbreviation for BNT-BT-Mnx) are prepared on Pt/Ti/SiO2/Si substrate via sol-gel and spin-coating. The influences of Mn dopant on the microstructural characteristics, dielectric and energy storage performances are studied systematically. It is found that by incorporating the Mn into BNT-BT, the breakdown strength and maximum polarization are enhanced dramatically, leading to the giant energy storage density of 54 J/cm3, with high permittivity 355 at 1 kHz. Moreover, the dominant leakage conduction mechanisms of the thin films are studied by linear fitting method, revealing that the leakage current mechanism of BNT-BT-Mnx films transforms from space-charge-limited conduction (SCLC) to Schottky emission as the increasing of electric field. The excellent energy storage density as well as dielectric properties suggest that BNT-BT-Mn6 thin film might be an attractive lead-free material for energy storage devices.

引用

页码：23259 / 23266

页数：8

共 64 条

[1]

A. Gallegos-Melgar D.G. Espinosa-Arbelaez, 2015, APPL SURF SCI, V359, P923

[2] Reduced leakage current and improved multiferroic properties of 0.5 ((1-x)BLPFO-xPZT)-0.5PVDF composite films [J].

Adhlakha, Nidhi ;

Yadav, K. L. ;

Truccato, Marco ;

Manjusha .

CERAMICS INTERNATIONAL, 2016, 42 (16) :18238-18246

[3] Antiferroelectric Thin-Film Capacitors with High Energy-Storage Densities, Low Energy Losses, and Fast Discharge Times [J].

Ahn, Chang Won ;

Amarsanaa, Gantsooj ;

Won, Sung Sik ;

Chae, Song A. ;

Lee, Dae Su ;

Kim, Ill Won .

ACS APPLIED MATERIALS & INTERFACES, 2015, 7 (48) :26381-26386

[4] Processing of Manganese-Doped [Bi0.5Na0.5]TiO3 Ferroelectrics: Reduction and Oxidation Reactions During Calcination and Sintering [J].

Aksel, Elena ;

Jakes, Peter ;

Erdem, Emre ;

Smyth, Donald M. ;

Ozarowski, Andrew ;

van Tol, Johan ;

Jones, Jacob L. ;

Eichel, Ruediger-A. .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2011, 94 (05) :1363-1367

[5] First-principles determination of chemical potentials and vacancy formation energies in PbTiO3 and BaTiO3 [J].

Alahmed, Zeyad ;

Fu, Huaxiang .

PHYSICAL REVIEW B, 2007, 76 (22)

[6] Enhanced energy storage density in Sc3+ substituted Pb(Zr0.53Ti0.47)O3 nanoscale films by pulse laser deposition technique [J].

Bhattarai, Mohan K. ;

Mishra, Karuna K. ;

Instan, Alvaro A. ;

Bastakoti, Bishnu P. ;

Katiyar, Ram S. .

APPLIED SURFACE SCIENCE, 2019, 490 :451-459

[7]

Cernea M., J ALLOYS, V05

[8] Piezoelectric BNT-BT0.11 thin films processed by sol-gel technique [J].

Cernea, Marin ;

Galca, Aurelian Catalin ;

Cioangher, Marius Cristian ;

Dragoi, Cristina ;

Ioncea, Gelu .

JOURNAL OF MATERIALS SCIENCE, 2011, 46 (17) :5621-5627

[9] Sol-gel derived TiNb2O7 dielectric thin films for transparent electronic applications [J].

Chang, Ming-Chuan ;

Huang, Chieh-Szu ;

Ho, Yi-Da ;

Huang, Cheng-Liang .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2018, 101 (02) :674-682

[10] High recoverable energy storage density in (1-x)Bi0.5(Na0.8K0.2)0.5TiO3-xSrZrO3 thin films prepared by a sol-gel method [J].

Chen, Pan ;

Wu, Shuanghao ;

Li, Peng ;

Zhai, Jiwei ;

Shen, Bo .

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2018, 38 (14) :4640-4645

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