Improvement of Nanotwinned Copper Thermal Stability for High Temperature Heterogeneous Integration

被引：1

作者：

Chiu, Wei-Lan ^{[1
]}

Hung, Ying Tzu ^{[1
]}

Lee, Ou-Hsiang ^{[1
]}

Ou-Yang, Tsung Yu ^{[1
]}

Chang, Hsiang-Hung ^{[1
]}

Lo, Wei-Chung ^{[1
]}

机构：

[1] Ind Technol Res Inst ITRI, Elect & Optoelect Syst Res Labs, Hsinchu, Taiwan

来源：

2021 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS (VLSI-TSA) | 2021年

关键词：

D O I：

10.1109/VLSI-TSA51926.2021.9440121

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The novel nanotwinned copper material was investigated for use as an interconnect material for microelectronic packaging. It provides improved electro-migration and mechanical reliabilities versus traditional Cu interconnects. By adding low level impurities, nt-Cu can be stabilized for a thermal budget of 400 degrees C for 1h annealing. This technology is promising for high temperature heterogeneous integration.

引用

页数：2

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