Sacrificial anodic oxidation of 6H-SiC

被引：10

作者：

Kato, M ^{[1
]}

Ichimura, M ^{[1
]}

Arai, E ^{[1
]}

机构：

[1] Nagoya Inst Technol, Dept Elect & Comp Engn, Nagoya, Aichi 4668555, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2001年 / 40卷 / 11A期

关键词：

anodic oxidation; sacrificial oxidation; 6H-SiC; oxide film; electrolyte;

D O I：

10.1143/JJAP.40.L1145

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We formed oxide films on n-type 6H-SiC by an anodic oxidation method. As the electrolyte, a mixed solution of ethylene glycol, water and KNO3 was employed. By applying voltage with constant current to 6H-SiC, an oxide film was formed on the sample. The oxide was easily etched by HF. The formation rate for the anodic oxide was much higher than the typical thermal oxidation rate for 6H-SiC. By using this method for sacrificial oxidation before contact formation, Al ohmic contact resistance was reduced compared with those on an as-received surface.

引用

页码：L1145 / L1147

页数：3

共 13 条

[1] Study on electron trapping and interface states of various gate dielectric materials in 4H-SiC metal-oxide-semiconductor capacitors [J].