8300V blocking voltage AlGaN/GaN power HFET with thick poly-AlN passivation

被引：103

作者：

Uemoto, Yasuhiro ^{[1
]}

Shibata, Daisuke ^{[1
]}

Yanagihara, Manabu ^{[1
]}

Ishida, Hidetoshi ^{[1
]}

Matsuo, Hisayoshi ^{[1
]}

Nagai, Shuichi ^{[2
]}

Batta, Nagaraj ^{[2
]}

Li, Ming ^{[2
]}

Ueda, Tetsuzo ^{[1
]}

Tanaka, Tsuyoshi ^{[1
]}

Ueda, Daisuke ^{[1
]}

机构：

[1] Matsushita Elect Panasonic, Semicond Co, Semicond Device Res Ctr, 1 Kotari Yakemachi, Kyoto 6178520, Japan

[2] Panason Technol Co, Panason Boston Lab, Cambridge, MA 02142 USA

来源：

2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2 | 2007年

关键词：

D O I：

10.1109/IEDM.2007.4419085

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report ultra high voltage AlGaN/GaN heterojunction transistors (HFETs) on sapphire with thick poly-AlN passivation. Extremely high blocking voltage of 8300V is achieved while maintaining relative low specific on-state resistance (Ron center dot A) of 186m Omega center dot cm(2). Via-holes through sapphire at the drain electrodes enable very efficient layout of the lateral HFET array as well as better heat dissipation.

引用

页码：861 / +

页数：2

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