A two-dimensional spin field-effect switch

被引：178

作者：

Yan, Wenjing ^{[1
]}

Txoperena, Oihana ^{[1
]}

Llopis, Roger ^{[1
]}

Dery, Hanan ^{[2
,3
]}

Hueso, Luis E. ^{[1
,4
]}

Casanova, Felix ^{[1
,4
]}

机构：

[1] CIC NanoGUNE, Tolosa Hiribidea 76, Donostia San Sebastian 20018, Basque Country, Spain

[2] Univ Rochester, Dept Elect & Comp Engn, Rochester, NY 14627 USA

[3] Univ Rochester, Dept Phys & Astron, Rochester, NY 14627 USA

[4] Ikerbasque, Basque Fdn Sci, Bilbao 48013, Basque Country, Spain

来源：

NATURE COMMUNICATIONS | 2016年 / 7卷

基金：

美国国家科学基金会; 欧盟第七框架计划; 欧洲研究理事会;

关键词：

GRAPHENE; MOS2; RELAXATION; PRECESSION; TRANSPORT;

D O I：

10.1038/ncomms13372

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Future development in spintronic devices will require an advanced control of spin currents, for example by an electric field. Here we demonstrate an approach that differs from previous proposals such as the Datta and Das modulator, and that is based on a van de Waals heterostructure of atomically thin graphene and semiconducting MoS2. Our device combines the superior spin transport properties of graphene with the strong spin-orbit coupling of MoS2 and allows switching of the spin current in the graphene channel between ON and OFF states by tuning the spin absorption into the MoS2 with a gate electrode. Our proposal holds potential for technologically relevant applications such as search engines or pattern recognition circuits, and opens possibilities towards electrical injection of spins into transition metal dichalcogenides and alike materials.

引用

页数：6

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