A two-dimensional spin field-effect switch

被引：173
作者：
Yan, Wenjing [1 ]
Txoperena, Oihana [1 ]
Llopis, Roger [1 ]
Dery, Hanan [2 ,3 ]
Hueso, Luis E. [1 ,4 ]
Casanova, Felix [1 ,4 ]
机构：
[1] CIC NanoGUNE, Tolosa Hiribidea 76, Donostia San Sebastian 20018, Basque Country, Spain
[2] Univ Rochester, Dept Elect & Comp Engn, Rochester, NY 14627 USA
[3] Univ Rochester, Dept Phys & Astron, Rochester, NY 14627 USA
[4] Ikerbasque, Basque Fdn Sci, Bilbao 48013, Basque Country, Spain
来源：
NATURE COMMUNICATIONS | 2016年 / 7卷
基金：
美国国家科学基金会; 欧盟第七框架计划; 欧洲研究理事会;
关键词：
GRAPHENE; MOS2; RELAXATION; PRECESSION; TRANSPORT;
D O I：
10.1038/ncomms13372
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
Future development in spintronic devices will require an advanced control of spin currents, for example by an electric field. Here we demonstrate an approach that differs from previous proposals such as the Datta and Das modulator, and that is based on a van de Waals heterostructure of atomically thin graphene and semiconducting MoS2. Our device combines the superior spin transport properties of graphene with the strong spin-orbit coupling of MoS2 and allows switching of the spin current in the graphene channel between ON and OFF states by tuning the spin absorption into the MoS2 with a gate electrode. Our proposal holds potential for technologically relevant applications such as search engines or pattern recognition circuits, and opens possibilities towards electrical injection of spins into transition metal dichalcogenides and alike materials.
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页数：6
相关论文
共 47 条
  • [1] Spin-orbit proximity effect in graphene
    Avsar, A.
    Tan, J. Y.
    Taychatanapat, T.
    Balakrishnan, J.
    Koon, G. K. W.
    Yeo, Y.
    Lahiri, J.
    Carvalho, A.
    Rodin, A. S.
    O'Farrell, E. C. T.
    Eda, G.
    Castro Neto, A. H.
    Oezyilmaz, B.
    [J]. NATURE COMMUNICATIONS, 2014, 5
  • [2] Colossal enhancement of spin-orbit coupling in weakly hydrogenated graphene
    Balakrishnan, Jayakumar
    Koon, Gavin Kok Wai
    Jaiswal, Manu
    Castro Neto, A. H.
    Oezyilmaz, Barbaros
    [J]. NATURE PHYSICS, 2013, 9 (05) : 284 - 287
  • [3] Calleja F, 2015, NAT PHYS, V11, P43, DOI [10.1038/NPHYS3173, 10.1038/nphys3173]
  • [4] Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping
    Castellanos-Gomez, Andres
    Buscema, Michele
    Molenaar, Rianda
    Singh, Vibhor
    Janssen, Laurens
    van der Zant, Herre S. J.
    Steele, Gary A.
    [J]. 2D MATERIALS, 2014, 1 (01):
  • [5] Control of Schottky Barriers in Single Layer MoS2 Transistors with Ferromagnetic Contacts
    Chen, Jen-Ru
    Odenthal, Patrick M.
    Swartz, Adrian G.
    Floyd, George Charles
    Wen, Hua
    Luo, Kelly Yunqiu
    Kawakami, Roland K.
    [J]. NANO LETTERS, 2013, 13 (07) : 3106 - 3110
  • [6] Choi WY, 2015, NAT NANOTECHNOL, V10, P666, DOI [10.1038/NNANO.2015.107, 10.1038/nnano.2015.107]
  • [7] Chuang P, 2015, NAT NANOTECHNOL, V10, P35, DOI [10.1038/nnano.2014.296, 10.1038/NNANO.2014.296]
  • [8] Cui X, 2015, NAT NANOTECHNOL, V10, P534, DOI [10.1038/nnano.2015.70, 10.1038/NNANO.2015.70]
  • [9] High-Performance Molybdenum Disulfide Field-Effect Transistors with Spin Tunnel Contacts
    Dankert, Andre
    Langouche, Lennart
    Kamalakar, Mutta Venkata
    Dash, Saroj Prasad
    [J]. ACS NANO, 2014, 8 (01) : 476 - 482
  • [10] ELECTRONIC ANALOG OF THE ELECTROOPTIC MODULATOR
    DATTA, S
    DAS, B
    [J]. APPLIED PHYSICS LETTERS, 1990, 56 (07) : 665 - 667
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