One-step nano-selective area growth (nano-SAG) of localized InAs/InP quantum dots: First step towards single-photon source applications

被引：7

作者：

Gogneau, N. ^{[1
]}

Le Gratiet, L. ^{[1
]}

Cambril, E. ^{[1
]}

Beaudoin, G. ^{[1
]}

Patriarche, G. ^{[1
]}

Beveratos, A. ^{[1
]}

Hostein, R. ^{[1
]}

Robert-Philip, I. ^{[1
]}

Marzin, J. Y. ^{[1
]}

Sagnes, I. ^{[1
]}

机构：

[1] CNRS, Lab Photon & Nanostruct, UPR20, F-91460 Marcoussis, France

来源：

JOURNAL OF CRYSTAL GROWTH | 2008年 / 310卷 / 15期

关键词：

nanostructures; metalorganic vapor-phase epitaxy; selective epitaxy; semiconducting III-V materials;

D O I：

10.1016/j.jcrysgro.2008.04.019

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We demonstrate the feasibility of a new approach based on the nano selective area growth (nano-SAG), which allows the precise spacial localization, in the nanometer scale, of InAs/InP quantum dots (QDs) grown by low-pressure metal organic vapor-phase epitaxy. By using the hydrogen silsesquioxane-negative resist, we partially pattern the substrate in only one step (e-beam lithography) with dielectric masks containing nano-openings. We demonstrate that the one-step nano-SAG technique leads to the formation of site-controlled InAs/InP QDs with good structural properties, and allows the good control of the growth rate and thus of the QD size into the nano-openings. (c) 2008 Elsevier B.V. All rights reserved.

引用

页码：3413 / 3415

页数：3

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