On the importance of atom probe tomography for the development of new nanoscale devices

被引:3
|
作者
Borrely, Thales [1 ]
Huang, Tao-Yu [2 ]
Yang, Yu-Chen [2 ]
Goldman, Rachel S. [2 ]
Quivy, Alain A. [1 ]
机构
[1] Univ Sao Paulo, Inst Phys, Sao Paulo, Brazil
[2] Univ Michigan, Mat Sci & Engn, Ann Arbor, MI USA
来源
2022 36TH SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY (SBMICRO 2022) | 2022年
关键词
atom probe tomography; semiconductors; devices; chemical characterization; nanostructures;
D O I
10.1109/SBMICRO55822.2022.9881039
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Atom probe tomography is the only technique capable of measuring with sub-nanometer resolution three-dimensional spatial distributions of all chemical elements with no restrictions of mass or atomic number. The technique has been playing an important role in the development of all sorts of semiconductor devices. However, it is still somewhat little-known outside of the most developed parts of the world. Bearing this in mind, this work aims to present and discuss the atom probe tomography technique and, more importantly, its impact on the development of nanoscale devices to the Brazilian Microelectronics Society. First, we introduce the working principles and experimental procedures of atom probe tomography. Next, we present a few real examples of applications of the technique to device development. Lastly, we briefly discuss the possibility of an application that has not been done yet, namely the atom probe tomography of submonolayer quantum dots.
引用
收藏
页数:4
相关论文
共 50 条
  • [31] Atom probe tomography
    Nature Reviews Methods Primers, 1
  • [32] Atom Probe Tomography
    Felfer, P.
    Stephenson, L. T.
    Li, T.
    PRAKTISCHE METALLOGRAPHIE-PRACTICAL METALLOGRAPHY, 2018, 55 (08): : 515 - 526
  • [33] Atom Probe Tomography
    Shea, John J.
    IEEE ELECTRICAL INSULATION MAGAZINE, 2017, 33 (04) : 71 - 71
  • [34] Atom probe tomography for advanced nanoelectronic devices: Current status and perspectives
    Barnes, J. P.
    Grenier, A.
    Mouton, I.
    Barraud, S.
    Audoit, G.
    Bogdanowicz, J.
    Fleischmann, C.
    Melkonyan, D.
    Vandervorst, W.
    Duguay, S.
    Rolland, N.
    Vurpillot, F.
    Blavette, D.
    SCRIPTA MATERIALIA, 2018, 148 : 91 - 97
  • [35] Xenotime at the Nanoscale: U-Pb Geochronology and Optimisation of Analyses by Atom Probe Tomography
    Joseph, Cilva
    Fougerouse, Denis
    Saxey, David W.
    Verberne, Rick
    Reddy, Steven M.
    Rickard, William D. A.
    GEOSTANDARDS AND GEOANALYTICAL RESEARCH, 2021, 45 (03) : 443 - 456
  • [36] Characterizing nanoscale precipitation in a titanium alloy by laser-assisted atom probe tomography
    Coakley, James
    Radecka, Anna
    Dye, David
    Bagot, Paul A. J.
    Martin, Tomas L.
    Prosa, Ty J.
    Chen, Yimeng
    Stone, Howard J.
    Seidman, David N.
    Isheim, Dieter
    MATERIALS CHARACTERIZATION, 2018, 141 : 129 - 138
  • [37] Analysis of nanoscale fluid inclusions in geomaterials by atom probe tomography: Experiments and numerical simulations
    Dubosq, R.
    Gault, B.
    Hatzoglou, C.
    Schweinar, K.
    Vurpillot, F.
    Rogowitz, A.
    Rantitsch, G.
    Schneider, D. A.
    ULTRAMICROSCOPY, 2020, 218 (218)
  • [38] Nanoscale compositional analysis of wurtzite BAlN thin film using atom probe tomography
    Sarker, Jith
    Tinh Binh Tran
    AlQatari, Feras
    Liao, Che-Hao
    Li, Xiaohang
    Mazumder, Baishakhi
    APPLIED PHYSICS LETTERS, 2020, 117 (23)
  • [39] Nanoscale characterization of compound semiconductors using laser-pulsed atom probe tomography
    Muller, M.
    Saxey, D. W.
    Cerezo, A.
    Smith, G. D. W.
    16TH INTERNATIONAL CONFERENCE ON MICROSCOPY OF SEMICONDUCTING MATERIALS, 2010, 209
  • [40] Pushing the limits: Resolving paleoseawater signatures in nanoscale fluid inclusions by atom probe tomography
    Taylor, S. D.
    Gregory, D. D.
    Kovarik, L.
    Cliff, J. B.
    Lyons, T. W.
    EARTH AND PLANETARY SCIENCE LETTERS, 2022, 599