Optical investigations of two dimensional electron gas in the AlGaN/GaN heterostructures

被引：4

作者：

Kudrawiec, R ^{[1
]}

Syperek, M ^{[1
]}

Misiewici, J ^{[1
]}

Pasaiewiez, R ^{[1
]}

Paszkiewicz, B ^{[1
]}

Tlaczala, M ^{[1
]}

Strupinski, W ^{[1
]}

机构：

[1] Wroclaw Tech Univ, Inst Phys, PL-50370 Wroclaw, Poland

来源：

E-MRS 2003 FALL MEETING, SYMPOSIA A AND C, PROCEEDINGS | 2004年 / 1卷 / 02期

关键词：

D O I：

10.1002/200303956

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Undoped and Si doped AlGaN/GaN heterostructures have been investigated in reflectance (R) and photoreflectance (PR) spectroscopies. In the case of R spectra, features associated with GaN and AlGaN layers are observed for these two heterostructures. The GaN- and AlGaN-related transitions are better visible in PR spectra. In addition, a feature associated with two dimensional electron gas (2DEG) has been observed in PR spectrum of Si doped AlGaN/GaN heterostructure. This feature is rather not observed for the undoped AlGaN/GaN heterostructure. For the undoped heterostructure a huge internal electric field (284 kV/cm) has been found. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：378 / 381

页数：4

共 25 条

[1] Contactless characterisation of 2D-electrons in GaN/AlGaN HFETs [J].

Alause, H ;

Skierbiszewski, C ;

Dyakonov, M ;

Knap, W ;

Sadowski, ML ;

Huant, S ;

Young, J ;

Khan, MA ;

Chen, Q .

[2] Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures [J].

Ambacher, O ;

Smart, J ;

Shealy, JR ;

Weimann, NG ;

Chu, K ;

Murphy, M ;

Schaff, WJ ;

Eastman, LF ;

Dimitrov, R ;

Wittmer, L ;

Stutzmann, M ;

Rieger, W ;

Hilsenbeck, J .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (06) :3222-3233

[3] Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures [J].

Ambacher, O ;

Foutz, B ;

Smart, J ;

Shealy, JR ;

Weimann, NG ;

Chu, K ;

Murphy, M ;

Sierakowski, AJ ;

Schaff, WJ ;

Eastman, LF ;

Dimitrov, R ;

Mitchell, A ;

Stutzmann, M .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (01) :334-344

[4] SCHOTTKY-BARRIER ELECTROREFLECTANCE-APPLICATION TO GAAS [J].

ASPNNES, DE ;

STUDNA, AA .

PHYSICAL REVIEW B, 1973, 7 (10) :4605-4652

[5] 75 angstrom GaN channel modulation doped field effect transistors [J].

Burm, J ;

Schaff, WJ ;

Eastman, LF ;

Amano, H ;

Akasaki, I .

APPLIED PHYSICS LETTERS, 1996, 68 (20) :2849-2851

[6] Two-dimensional electron gases in Ga-face and N-face AlGaN/GaN heterostructures grown by plasma-induced molecular beam epitaxy and metalorganic chemical vapor deposition on sapphire [J].

Dimitrov, R ;

Murphy, M ;

Smart, J ;

Schaff, W ;

Shealy, JR ;

Eastman, LF ;

Ambacher, O ;

Stutzmann, M .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (07) :3375-3380

[7] Photo- and electroreflectance spectroscopy of low-dimensional III-nitride structures [J].

Drabinska, A .

ACTA PHYSICA POLONICA A, 2003, 104 (02) :149-164

[8] An analysis of temperature dependent piezoelectric Franz-Keldysh effect in AlGaN [J].

Hou, YT ;

Teo, KL ;

Li, MF ;

Uchida, K ;

Tokunaga, H ;

Akutsu, N ;

Matsumoto, K .

APPLIED PHYSICS LETTERS, 2000, 76 (08) :1033-1035

[9] OBSERVATION OF A 2-DIMENSIONAL ELECTRON-GAS IN LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITED GAN-ALXGA1-XN HETEROJUNCTIONS [J].

KHAN, MA ;

KUZNIA, JN ;

VANHOVE, JM ;

PAN, N ;

CARTER, J .

APPLIED PHYSICS LETTERS, 1992, 60 (24) :3027-3029

[10] Determination of the carrier-type at III-nitride semiconductor surfaces/interfaces using contactless electroreflectance [J].

Krystek, W ;

Pollak, FH ;

Feng, ZC ;

Schurman, M ;

Stall, RA .

APPLIED PHYSICS LETTERS, 1998, 72 (11) :1353-1355

← 1 2 3 →