Strain effects on indium incorporation and optical transitions in green-light InGaN heterostructures of different orientations

被引：39

作者：

Durnev, M. V. ^{[1
,2
]}

Omelchenko, A. V. ^{[2
]}

Yakovlev, E. V. ^{[1
]}

Evstratov, I. Yu. ^{[1
]}

Karpov, S. Yu. ^{[1
]}

机构：

[1] Soft Impact Ltd, STR Grp, St Petersburg 194156, Russia

[2] St Petersburg Acad Univ, Nanotechnol Res & Educ Ctr RAS, St Petersburg 195220, Russia

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2011年 / 208卷 / 11期

关键词：

band structure; InGaN; indium incorporation; optical transitions; strain effects; WURTZITE SEMICONDUCTORS; ELECTRONIC-PROPERTIES; QUANTUM-WELLS; NITRIDE;

D O I：

10.1002/pssa.201127278

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Strain effect on indium incorporation and optical transitions in bulk InGaN and GaN/InGaN/GaN quantum wells (QWs) coherently grown on GaN substrates with different orientations of hexagonal axis is studied by simulation. The strain modification in the nonpolar and semipolar structures, as compared to polar ones, is found to result in both a higher indium percentage in the InGaN alloy and a larger materials bandgap, producing opposite trends in variation of the optical transition energy (emission wavelength) with the crystal orientation. The interplay between the effects is discussed in view of development of green-light emitters. A possible way for controlling the strain in the InGaN layers and QWs and thus the emission wavelength is considered and tested by modelling. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：2671 / 2675

页数：5

共 19 条

[1] SPIN-ORBIT-COUPLING EFFECTS ON THE VALENCE-BAND STRUCTURE OF STRAINED SEMICONDUCTOR QUANTUM-WELLS [J].

CHAO, CYP ;

CHUANG, SL .

PHYSICAL REVIEW B, 1992, 46 (07) :4110-4122

[2] k center dot p method for strained wurtzite semiconductors [J].

Chuang, SL ;

Chang, CS .

PHYSICAL REVIEW B, 1996, 54 (04) :2491-2504

[3]

Davydov VY, 2002, PHYS STATUS SOLIDI B, V230, pR4, DOI 10.1002/1521-3951(200204)230:2<R4::AID-PSSB99994>3.0.CO

[4]

2-Z

[5] Indium incorporation and optical transitions in InGaN bulk materials and quantum wells with arbitrary polarity [J].

Durnev, M. V. ;

Omelchenko, A. V. ;

Yakovlev, E. V. ;

Evstratov, I. Yu ;

Karpov, S. Yu .

APPLIED PHYSICS LETTERS, 2010, 97 (05)

[6] Progress in the growth of nonpolar gallium nitride [J].

Haskell, B. A. ;

Nakamura, S. ;

DenBaars, S. P. ;

Speck, J. S. .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2007, 244 (08) :2847-2858

[7]

Karpov S. Yu., 2001, MATER RES SOC S P, V639, pG318

[8]

Karpov SY, 1998, MRS INTERNET J N S R, V3

[9] Novel approach to simulation of group-III nitrides growth by MOVPE [J].

Karpov, SY ;

Prokofyev, VG ;

Yakovlev, EV ;

Talalaev, RA ;

Makarov, YN .

MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 1999, 4 (04) :art. no.-4

[10] Crystal orientation effects on electronic properties of wurtzite InGaN/GaN quantum wells [J].

Park, SH .

JOURNAL OF APPLIED PHYSICS, 2002, 91 (12) :9904-9908

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